湿法刻蚀制备亚10微米厚Ge薄膜
Sub-10-micron thick Ge thin films from bulk-Ge substrates via a wet etching method
摘要：
低缺陷密度的Ge薄膜在与Si电子器件集成的Ge基光学器件（光学探测器、LED和激光器）中是关键的，用于低成本、高度集成的光子电路。本论文研究了四种不同溶液湿法腐蚀制备的锗薄膜的表面形貌、缺陷密度和可达到的厚度。基于纳米带的溶液（1：1：10）和基于HCl的溶液（1：1：5）都能够在53小时内将535微米厚的体Ge衬底湿法蚀刻成薄于10微米的Ge膜。相应的RMS表面粗糙度对于纳米带基溶液为32 nm，对于HCl基溶液为10 nm。根据HRXRD结果，在蚀刻工艺之前和之后，体Ge的质量良好。在湿法腐蚀过程中，没有引入额外的缺陷，保持了6000-7000 cm-2的低穿透位错密度。这种方法提供了一种廉价和方便的方法来制备亚10微米厚的Ge薄膜，使未来的低缺陷密度的Ge基器件，如光电探测器，LED和激光器的研究。
英文摘要：
Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated photonic circuits. In this work, Ge thin films prepared by wet etching with four different solutions were studied in terms of the surface morphology, defect density and achievable thickness. Both nanostrip-based solution (1:1:10) and HCl-based solution (1:1:5) were able to wet-etch 535 micron thick bulk-Ge substrates to Ge films thinner than 10 micron within 53 hours. The corresponding RMS surface roughness was 32 nm for the nanostrip-based solution and 10 nm for the HCl-based solution. The good quality of bulk-Ge was preserved before and after the etching process according to the HRXRD results. The low threading dislocation density of 6000-7000 cm-2 was maintained in the process of wet etching without introducing extra defects. This approach provides an inexpensive and convenient way to prepare sub-10-micron thick Ge thin films, enabling future studies of low-defect-density Ge-based devices such as photodetectors, LEDs, and lasers.
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