arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 2408.10071cond-mat.mtrl-sciphysics.app-ph
收藏

一种制备微尺度自支撑单晶复杂氧化物器件阵列的策略

A strategy for fabricating micro-scale freestanding single-crystalline complex oxide device arrays

Huandong Chen, Yang Liu, Harish Kumarasubramanian, Mythili Surendran, Jayakanth Ravichandran

AI总结:

本文提出一种基于湿法刻蚀与外延剥离的通用策略,用于制备微尺度自支撑单晶复杂氧化物器件阵列,并以BCZT铁电电容器为例验证了其在玻璃衬底上的异质集成可行性。

摘要:

我们提出了一种通用的制备策略,通过基于湿法化学刻蚀的微加工工艺和外延剥离来制备自支撑单晶复杂氧化物器件阵列。在此,我们以0.5Ba(Zr$_{0.2}$Ti$_{0.8}$)O$_3$-0.5Ba(Zr$_{0.7}$Ti$_{0.3}$)O$_3$(BCZT)作为模型弛豫铁电氧化物体系,并以La$_{0.7}$Sr$_{0.3}$MnO$_3$作为牺牲层进行演示。首先在生长晶圆上定义并隔离SrRuO$_3$(SRO)/BCZT/SRO铁电电容器台面阵列,然后利用外延剥离和光刻定义的周围刻蚀孔将其释放,之后将自支撑器件阵列集成到玻璃衬底上。我们提出的策略为制备各种自支撑单晶氧化物器件提供了思路,并为其在任意衬底上的异质集成铺平了道路。

英文摘要:

We present a general fabrication strategy for freestanding single-crystalline complex oxide device arrays via wet chemical etching-based microfabrication processes and epitaxial lift-off. Here, we used 0.5Ba(Zr$_{0.2}$Ti$_{0.8}$)O$_3$-0.5Ba(Zr$_{0.7}$Ti$_{0.3}$)O$_3$ (BCZT) as a model relaxor ferroelectric oxide system and La$_{0.7}$Sr$_{0.3}$MnO$_3$ as the sacrificial layer for demonstration. Arrays of SrRuO$_3$ (SRO) / BCZT / SRO ferroelectric capacitor mesas were first defined and isolated on the growth wafer, and then they were released using epitaxial lift-off with lithography-defined surrounding etching holes, after which the freestanding device arrays were integrated onto a glass substrate. Our proposed strategy sheds light on preparing various freestanding single-crystalline oxide devices and paves the way for their heterogeneous integration onto arbitrary substates.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑