用于硅衬底上硬掩模制备的湿法钪刻蚀
Wet Scandium Etching for hard mask formation on a silicon substrate
AI总结：
针对硅衬底上微纳结构制备的掩模材料需求，本研究提出将钪作为新型硬掩模材料，验证了湿法刻蚀钪层可制备4微米分辨率图案，且钪在等离子刻蚀下抗性优异，为微尺度图案制备提供了新方案。
摘要：
如今，微电子与纳米电子领域需要发掘新型材料，包括用于构建结构的掩模材料。当前，中间硬掩模策略是微电子制造中实现光刻与刻蚀良好平衡的关键问题之一。微电子与光伏领域的一项有趣挑战，是在硅衬底上制备间隔排列的垂直取向硅阵列，以制造具备多功能的半导体器件。这类结构的制备仍是严峻的技术难题，需要探索新的工艺思路与材料。本研究提出将钪作为硅衬底上的新型硬掩模材料，原因在于其具备高等离子体化学刻蚀抗性与低溅射系数。研究表明，对厚度为几纳米的钪层进行湿法刻蚀，可用于制备分辨率高达4微米的图案结构，这对于湿法刻蚀工艺而言是优良结果。研究发现，在选定的等离子体刻蚀条件下，金属钪是硅衬底上性能优异的抗性掩模。因此，钪硬掩模可为不同微尺度形貌图案的制备开辟新的可能性。
英文摘要：
Nowadays, microelectronics and nanoelectronics require the search for new materials, including masks for creating structures. Today, the intermediate hard mask strategy is one of the key issues in achieving a good balance between lithography and etching at the microelectronic fabrication. One of the interesting challenges in microelectronics and photovoltaics is the creation of interspacing, vertically oriented silicon arrays on Si substrate for semiconductor devices with multi-function. The fabrication of such structures is still a serious technological problem and requires searching for new approaches and materials. In this work, we propose using scandium as a new hard mask material over silicon due to its high resistance to plasma chemical etching and low sputtering coefficient. We have shown that a wet etching of the scandium layer with a thickness of several nanometers can be used to obtain pattern structures with a resolution of up to 4 microns, which is a good result for the wet etching approach. Scandium metal was found to be an excellent resistant mask over silicon under the selected plasma etching conditions. Therefore, a scandium hard mask can open up new possibilities for the formation of different microscale topographical patterns.
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