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arXiv 2202.01642cond-mat.str-elcond-mat.mes-hall
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对“三维高阶拓扑绝缘体的库仑不稳定性”的评论

Comment on "Coulomb Instabilities of a Three-Dimensional Higher-Order Topological Insulator"

Yu-Wen Lee, Min-Fong Yang

AI总结:

本文指出Zhao等人关于三维二阶拓扑绝缘体(SOTI)在库仑作用下必转变为拓扑绝缘体的结论有误,原因在于相变判据使用不当;作者提出应以表面态变号质量隙 $m_\ extrm{surf}$ 为判据,并基于重整化群方法证明了SOTI对弱库仑相互作用的稳定性。

摘要:

基于重整化群(RG)计算,Zhao等人最近的快报[Phys. Rev. Lett. 127, 176601 (2021)]声称三维二阶拓扑绝缘体(SOTIs)对库仑相互作用总是不稳定的,因此它们将经历拓扑相变,转变为拓扑绝缘体(TIs)或普通绝缘体。虽然本文中的计算是正确的,但关于从SOTI到TI的拓扑相变的结论是不正确的。这一错误结论背后的原因在于作者使用了错误的判据来识别相变。在本评论中,我们想提醒,为了定位从SOTI到TI的可能相变,一个合适的量是表面态的变号质量隙 $m_\ extrm{surf}$。通过在RG方法中检验其行为,证明了SOTI对弱库仑相互作用的稳定性。

英文摘要:

Based on renormalization-group (RG) calculations, a recent Letter by Zhao et al [Phys. Rev. Lett. 127, 176601 (2021)] claimed that three-dimensional second-order topological insulators (SOTIs) are always unstable to the Coulomb interaction and they will thus undergo topological phase transitions to either topological insulators (TIs) or normal insulators. While the calculations in this paper are correct, the conclusion about the topological phase transition from SOTI to TI is not true. The reason behind this false conclusion lies in that the authors use a wrong criterion to identify the phase transition. In this Comment we would like to remind that, to locate the possible transitions from SOTI to TI, an appropriate quantity is the sign-changing mass gap $m_\textrm{surf}$ for the surface states. By examining its behavior within RG approach, the stability of SOTI against weak Coulomb interactions is demonstrated.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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