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arXiv 2201.04937cond-mat.mtrl-sci
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940 nm AlGaAs分布布拉格反射器在体锗衬底上的单片集成

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

Yunlong Zhao, Jia Guo, Markus Feifel, Hao-tien Cheng, Yun-cheng Yang, Liming Wang, Lukas Chrostowski, David Lackner, Chao-hsin Wu, Guangrui, Xia

摘要:

高质量940 nm Al $_x$ Ga $_{1-x}$ As n型分布式布拉格反射器(DBR)成功地在非切割Ge(100)衬底上单片生长。Ge-DBR的反射率光谱与传统GaAs衬底上生长的反射率光谱相当,并且具有光滑的形貌、合理的周期性和均匀性。这些结果强烈支持VCSEL的生长和制造上更可扩展的体Ge衬底的大规模生产的AlGaAs基VCSEL。

英文摘要:

High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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