渐变GaAsP/bulk Si衬底上940 nm AlGaAs分布布拉格反射器的单片集成研究
Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates
摘要：
我们报道了在渐变GaAsP/Si衬底上单片集成940 nm AlGaAs分布布拉格反射器（DBR）的制备。在DBR表面上观察到低密度的表面凸起和交叉影线图案。横截面DBR层是光滑且平坦的。GaAsP/Si DBR的反射光谱强度比GaAs DBR低，且反射光谱具有双峰。通过传输矩阵法计算、表面划痕和抛光试验，表明表面阴影是导致DBR反射光谱劣化的原因。
英文摘要：
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than the GaAs DBRs and have double peaks. Transfer matrix method calculations, surface scratch and polishing tests were conducted, which suggest that the surface cross-hatch was the cause of the inferior DBR reflectance spectra.
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