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arXiv 2111.02503physics.ins-detcond-mat.mtrl-sci
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用于X射线TES吸收器的电镀铋热导率测量装置

Devices for Thermal Conductivity Measurements of Electroplated Bi for X-ray TES Absorbers

Orlando Quaranta, Lisa M. Gades, Cindy Xue, Ralu Divan, Umeshkumar M. Patel, Tejas Guruswamy, Antonino Miceli

AI总结:

针对电镀铋生长在金籽晶层上难以单独测量热电特性的问题,本研究提出四线电阻测量结构,测得3K下电镀铋热导率足以保证X射线光子热化,为其在X射线TES吸收器中的应用提供支撑。

摘要:

电镀铋(Bi)因其高阻止本领和低热容,常被用于X射线过渡边缘传感器(TES)中。电镀铋通常生长在作为籽晶层的另一种金属(通常是金(Au))之上,这使得推断其热电特性颇具挑战。在本工作中,我们提出了四线电阻测量结构,能够独立于金测量电镀铋的电阻随温度的变化关系。结果表明,3 K温度下铋的热导率足够高,可确保其用作TES吸收器时X射线光子的正确热化。

英文摘要:

Electroplated Bismuth (Bi) is commonly used in Transition-Edge Sensors (TESs) for X-rays because of its high stopping power and low heat capacity. Electroplated Bi is usually grown on top of another metal that acts as seed layer, typically gold (Au), making it challenging to extrapolate its thermoelectric properties. In this work, we present four-wire resistance measurement structures that allow us to measure resistance as a function of temperature of electroplated Bi independently of Au. The results show that the thermal conductivity of the Bi at 3 K is high enough to guarantee the correct thermalization of X-ray photons when used as an absorber for TESs.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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