A hole injected into a Mott insulator will gain an internal structure as recently identified by exact numerics, which is characterized by a nontrivial quantum number whose nature is of central importance in understanding the Mott physics. In this work, we show that a spin texture associated with such an internal degree of freedom can explicitly manifest after the spin degeneracy is lifted by a \emph{weak} Rashba spin-orbit coupling (SOC). It is described by an emergent angular momentum $J_{z}=\pm3/2$ as shown by both exact diagonalization (ED) and variational Monte Carlo (VMC) calculations, which are in good agreement with each other at a finite size. In particular, as the internal structure such a spin texture is generally present in the hole composite even at high excited energies, such that a corresponding texture in momentum space, extending deep inside the Brillouin zone, can be directly probed by the spin-polarized angle-resolved photoemission spectroscopy (ARPES). This is in contrast to a Landau quasiparticle under the SOC, in which the spin texture induced by SOC will not be protected once the excited energy is larger than the weak SOC coupling strength, away from the Fermi energy. We point out that the spin texture due to the SOC should be monotonically enhanced 1with reducing spin-spin correlation length in the superconducting/pseudogap phase at finite doping. A brief discussion of a recent experiment of the spin-polarized ARPES will be made.
Theory for superconductivity in (Tl,K)Fe$_x$Se$_2$ as a doped Mott insulator
本文从掺杂莫特绝缘体的观点研究了最近发现的（Tl，K）Fe $_x$ Se $_2$化合物的可能超导电性。由于Fe空位的存在，Mott绝缘相在$x=1.5$的母体化合物中被检查为优选的。在Fe位的空位的部分填充引入电子载流子并导致电子掺杂的超导电性。在强耦合极限下，利用双轨道哈伯德模型，我们发现在Hund耦合小的情况下，s波配对更有利，而在Hund耦合大的情况下，d $_{x^2-y^2}$波配对更有利.
Self-doped Molecular Mott Insulator for Bilayer High-Temperature Superconducting La3Ni2O7
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所）；Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences（中国科学院大学理论科学研究所）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）
In the framework of dynamical mean field theory (DMFT) we analyze Hall effect in doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence of Hall coefficient and Hall number on hole doping, determining the critical concentration for sign change of the Hall coefficient. Significant temperature dependence of Hall effect is noted. A good agreement is demonstrated with concentration dependence of Hall number obtained in experiments in the normal state of YBCO.
Properties of the doped spin 3/2 Mott insulator near half filling
本文对自旋为3/2的哈伯德模型在半填充附近具有大的反Hunds规则耦合的情形，给出了一个精确的广义Bogoliubov变换.由于我们的变换是么正的，因此我们可以在全希尔伯特空间中采用标准的近似平均场理论方法来分析掺杂的莫特绝缘体，这与基于截断希尔伯特空间补充硬核约束的传统方法相反。在完全半填充的基态是绝缘（莫特）单态，根据我们的分析，非费米液体序参量$ Δ$通常与扩展的s波超导性，将出现自洽尽快有限密度$ n $孔被引入。非费米液体行为是将Mott单重态映射到Fock真空的幺正变换的非线性性质的结果，该幺正变换在有效拉格朗日量中引入了诸如$Δn$的反常项。我们的分析使用的方法，很容易推广到多带哈伯德模型，并可以提供一种机制，即非费米液体序参量的密度成正比的莫特绝缘体与局部纠缠基态。对于更复杂的系统，这样的序参量可以自然地与各种其他序参量共存。
Reply to Comment on "Evolution of electronic structure of doped Mott insulator - reconstruction of poles and zeros of Green's function" [arXiv:0904.0454] by P. Phillips
Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-($\sqrt{3}\times \sqrt{3}$)-R30$^\textrm{o}$. In underdoped regions, we observe a universal pseudogap opening around the Fermi level, which changes little with the applied magnetic field and the occurrence of Sn vacancies. The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the…
Quantum spin liquid states, in which spins are quantum-mechanically delocalized in direction, have been so far studied for charge-localized Mott insulators arising from strong repulsive interaction. Recently, however, it was found that the doped Mott insulator with a triangular lattice, $κ$-(ET)$_4$Hg$_{2.89}$Br$_8$, exhibits both spin-liquid-like magnetism and metallic electrical conduction. Thus, it is now possible to experimentally explore how the spin liquidity affects the electrical conduction, an issue that has received a great deal of theoretical attention. Here, with a newly developed …
How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-$T_c$ cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at tw…
We present theoretical analysis of Hall effect in doped Mott-Hubbard insulator, considered as a prototype of cuprate superconductor. We consider the standard Hubbard model within DMFT approximation. As a typical case we consider the partially filled (hole doping) lower Hubbard band. We calculate the doping dependence of both the Hall coefficient and Hall number and determine the value of carrier concentration, where Hall effect changes its sign. We obtain a significant dependence of Hall effect parameters on temperature. Disorder effects are taken into account in a qualitative way.We also perf…
