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arXiv 2108.11263cond-mat.mtrl-scicond-mat.other
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电场驱动的Pt/Co/氧化物多层膜磁各向异性调控中离子迁移动力学

Kinetics of ion migration in the electric field-driven manipulation of magnetic anisotropy of Pt/Co/oxide multilayers

A. Fassatoui, L. Ranno, J. Peña Garcia, C. Balan, J. Vogel, H. Béa, S. Pizzini

摘要:

磁离子学是一个快速发展的研究领域,它通过离子在液体或固体电解质中的迁移来改变薄层的磁性。这主要是由于能量高效磁性装置的观点,其中磁化方向不是由磁场或电流控制,如在传统装置中那样,而是由电场控制,从而导致能量消耗的显著降低。在这项工作中,界面垂直磁各向异性(PMA)的一系列Pt/Co/氧化物三层覆盖的ZrO $_2$层,作为一种离子导体,在室温下进行微调的栅极电压。的非挥发性和时间演变的影响点在氧离子迁移通过ZrO $_2$层作为驱动机制。通过用氧离子的通量修改钴层的氧化程度来获得PMA的大的变化:易磁化轴可以可逆地从面内(具有氧化不足的Co)切换到面内(具有氧化过度的Co),通过具有最大PMA的面外磁化。不同磁状态之间的切换时间受到通过多层结构的氧离子漂移速度的限制。这被证明是指数依赖于所施加的偏置电压,并可以变化超过5个数量级,从几分钟到几毫秒。另一方面,对于一个固定的栅极电压,钴层的氧化指数下降作为时间的函数。这种行为与Cabrera和Mott(1949)提出的理论模型一致,该模型解释了在低温下非常薄的氧化物的生长。用相对简单的理论模型解释观察到的效应的可能性为工程师提供了优化性能的材料。

英文摘要:

Magneto-ionics, by which the magnetic properties of a thin layer can be modified through the migration of ions within a liquid or solid electrolyte, is a fast developing research field. This is mainly due to the perspective of energy efficient magnetic devices, in which the magnetization direction is controlled not by a magnetic field or an electrical current, as done in traditional devices, but by an electric field, leading to a considerable reduction of energy consumption. In this work, the interfacial perpendicular magnetic anisotropy (PMA) of a series of Pt/Co/oxide trilayers covered by a ZrO$_2$ layer, acting as a ionic conductor, was finely tuned by a gate voltage at room temperature. The non-volatility and the time evolution of the effect point at oxygen ion migration across the ZrO$_2$ layer as the driving mechanism. A large variation of the PMA is obtained by modifying the degree of oxidation of the cobalt layer with the flux of oxygen ions: the easy magnetization axis can be switched reversibly from in-plane, with an under-oxidized Co, to in-plane, with an over-oxidized Co, passing through an out-of-plane magnetization with maximum PMA. The switching time between the different magnetic states is limited by the oxygen ion drift velocity through the multilayer structure. This was shown to depend exponentially on the applied bias voltage, and could be varied by over 5 orders of magnitude, from several minutes to a few ms. On the other hand, for a fixed gate-voltage, the oxidation of the cobalt layer decreases exponentially as a function of time. This behavior is in agreement with the theoretical model developed by Cabrera and Mott (1949) to explain the growth of very thin oxides at low temperatures. The possibility to explain the observed effect with a relatively simple theoretical model opens the possibility to engineers materials with optimized properties.

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