The collected charge of two pad diodes is measured along the diode width using a 5:2 GeV electron beam at the DESY II beam test facility. The electron beam enters parallel to the readout electrode plane and perpendicular to the edge of the diode. The position of the electron beam is reconstructed by three planes of an EUDET-type telescope. An in-situ procedure is developed to align the diode surface parallel to the electron beam. The result of these measurements is the charge collection efficiency profile as a function of depth for each diode. For a non-irradiated diode, the charge profile is uniform as a function of the beam position for bias voltages above the full-depletion, as expected. For the irradiated diode, the charge profile is non-uniform and changes as a function of bias voltage.
Test-beam and simulation studies for the CLICTD technology demonstrator -- a monolithic CMOS pixel sensor with a small collection diode
CLIC Tracker Detector（CLICTD）是一款单片像素传感器，像素为30 um x 37.5 um，并配有一个小型收集二极管。该传感器采用180 nm CMOS成像工艺制造，使用两种不同的像素风格：第一种是连续的n型注入，用于完全横向耗尽，第二种是n型注入中的分段，用于加速电荷收集。此外，CLICTD具有创新的子像素分割方案，允许减少数字足迹，同时保持一个小的子像素间距。在本文中，介绍了使用分段n注入的像素风味的测试束测量。的性能进行评估的时间和空间分辨率以及效率。此外，试验梁数据进行比较，使用3D TCAD和蒙特卡罗模拟工具相结合的模拟研究。
Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip
本文包含一个汇编的参数影响的电荷收集过程中提取的全面研究的部分耗尽单片有源像素传感器与小（<25 μ m $^2$）收集电极在TowerJazz 180 nm CMOS工艺制造。这些结果为ALICE第二代内跟踪系统芯片ALPIDE中二极管的优化提供了指导，并为今后类似器件的仿真研究提供了参考。研究的参数包括：反向衬底偏压、外延层厚度、电荷收集电极尺寸和电极与周围像素内电子器件的间距。来自28 μ m间距的像素的结果证实，即使在部分耗尽的电路中，电荷收集也可以是快速的（<10 ns），并且量化了参数对信号共享和幅度的影响，突出了阱之间的正确间距和反向衬底偏压的影响的重要性。
