二维（2D）范德华异质结构（vdWH）在促进不同2D材料的层的堆叠方面具有其独特的潜力，用于光电子器件，其具有优异的特性和降低的成本。然而，大面积全二维异质结构的制备对于实现实用器件仍然具有挑战性。在目前的工作中，我们已经证明了一种快速而简单的，无杂质和高效的超声辅助化学剥离方法来合成基于二维二硫化钼（MoS $_2$）和二硫化钨（WS $_2$）的混合vdWHs，具有高产率。显微镜和光谱研究已经证实了层状2D材料的成功剥离和它们的混合异质结构的形成。通过光学吸收和拉曼位移测量以及X射线光电子能谱学确定的化学计量学，建立了vdW混合物中2D MoS 2和WS 2的共存。发现使用所合成的材料制造的vdWH/Si（2D/3D）异质结光电探测器的光谱响应与由基于单个2D MoS $_2$和WS $_2$的器件所示的光谱响应相比显示出优异的宽带光响应。峰值响应率被发现是~2.15 A/W，在波长为~560 nm的施加偏压为-5 V的化学合成的vdWH为基础的设备的易于制造和优越的性能，揭示了它们的潜在用途的大面积光电应用在Si兼容的CMOS平台。
英文摘要：
Two dimensional (2D) van der Waals heterostructures (vdWHs) have their unique potential in facilitating the stacking of layers of different 2D materials for optoelectronic devices with superior characteristics at a reduced cost. However, the fabrication of large area all-2D heterostructures is still challenging towards realizing practical devices. In the present work, we have demonstrated a rapid yet simple, impurity free and highly efficient sonication-assisted chemical exfoliation approach to synthesize hybrid vdWHs based on 2D molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$), with high yield. Microscopic and spectroscopic studies have confirmed the successful exfoliation of layered 2D materials and formation of their hybrid heterostructure. The co-existence of 2D MoS2 and WS2 in the vdW hybrid is established by optical absorption and Raman shift measurements along with their chemical stiochiometry determined by X-ray photoelectron spectroscopy. The spectral response of the vdWH/Si (2D/3D) heterojunction photodetector fabricated using the as-synthesized material is found to show superior broadband photoresponse compared to that shown by the individual 2D MoS$_2$ and WS$_2$ based devices. The peak responsivity is found to be ~2.15 A/W at a wavelength of ~560 nm for an applied bias of -5 V. The ease of fabrication and superior performance of the chemically synthesized vdWH-based devices have revealed their potential use for large area optoelectronic applications on Si compatible CMOS platforms.
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