空气稳定型$α$ $_3$纳米晶修饰的二维CsPbI $_2$非对称接触光电场效应晶体管中电荷转移介导的巨光放大
Charge transfer mediated giant photo-amplification in air-stable $α$-CsPbI$_3$ nanocrystals decorated 2D-WS$_2$ photo-FET with asymmetric contacts
摘要：
基于混合异质结的光电晶体管由于其光门效应而获得的高增益而备受关注。然而，在单沟道层晶体管中不存在面内内置电场导致相对较高的暗电流并且需要器件的大的操作栅极电压。在这里，我们报告了新的空气稳定的铯铅碘/二硫化钨（CsPbI $_3$ /WS $_2$）混合维异质结构为基础的光场效应晶体管（光场效应管）与非对称金属电极（铬/WS $_2$ /金），表现出极低的暗电流（~10-12 A），在零栅偏压下的响应度为~102 A/W。肖特基势垒（WS $_2$ /Au界面）在沟道中诱导整流特性，伴随着来自溶液处理的$α$相CsPbI $_3$ NC敏化剂的优异的光选通效应，导致具有非常高的响应度（~104 A/W）和优异的灵敏度（~106）的栅极可调谐宽带光电探测。最令人感兴趣的是，由于形成了具有相对较小晶格常数（α = 6.2315 Ω）的立方$α$相CsPbI $_3$纳米晶体，并用来自WS $_2$层的硫原子填充了表面空位（Pb 2+中心），该器件甚至在高湿度（50-65%）条件下也显示出优异的性能，从而保护其免受环境退化.这些结果强调了一种新的策略，开发混合维混合异质结构为基础的光电晶体管的未来集成纳米光电系统。
英文摘要：
Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively higher dark current and require a large operating gate voltage of the device. Here, we report novel air-stable cesium lead iodide/tungsten di-sulfide (CsPbI$_3$/WS$_2$) mixed dimensional heterostructure based photo-field-effect-transistors (photo-FETs) with asymmetric metal electrodes (Cr/WS$_2$/Au), exhibiting extremely low dark current (~10-12 A) with a responsivity of ~102 A/W at zero gate bias. The Schottky barrier (WS$_2$/Au interface) induced rectification characteristics in the channel accompanied by the excellent photogating effect from solution-processed $α$-phase CsPbI$_3$ NCs sensitizers, resulting in gate-tunable broadband photodetection with a very high responsivity (~104 A/W) and excellent sensitivity (~106). Most interestingly, the device shows superior performance even under high humidity (50-65%) conditions owing to the formation of cubic $α$-phase CsPbI$_3$ nanocrystals with a relatively smaller lattice constant (a = 6.2315 Å) and filling of surface vacancies (Pb2+ centres) with the sulfur atoms from WS$_2$ layer, thus protecting it from environmental degradation. These results emphasise a novel strategy for developing mixed dimensional hybrid heterostructure based phototransistors for futuristic integrated nano-optoelectronic systems.
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