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arXiv 2107.04849cond-mat.mtrl-sci
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黑磷单层磷分子中的荷电空位缺陷

Charged Vacancy Defects in Black Phosphorus Monolayer Phosphorene

Biswas Rijal, Anne Marie Z. Tan, Christoph Freysoldt, Richard G. Hennig

摘要:

二维半导体磷烯在光电子学、自旋电子学、催化、传感器和能量转换等方面有着广泛的应用前景。为了利用磷烯的潜力,需要更好地了解本征缺陷如何控制载流子浓度、特性和迁移率。利用密度泛函理论和电荷修正方案,考虑适当的边界条件,我们进行了全面的研究结构对带电空位点缺陷的形成能,电子结构和电荷跃迁能级的影响。我们预测,中性空位表现出9-5环结构的形成能为1.7 eV,并在费米能级1.04 eV以上的价带最大值转变为带负电的状态。相应的光电荷跃迁显示相当大的Frank-Condon位移与0.3 eV的大斯托克斯位移。在n掺杂的磷烯中,磷烯空位应带负电,这将钝化掺杂剂并降低载流子浓度和迁移率。

英文摘要:

The two-dimensional semiconductor phosphorene has attracted extensive research interests for potential applications in optoelectronics, spintronics, catalysis, sensors, and energy conversion. To harness phosphorene's potential requires a better understanding of how intrinsic defects control carrier concentration, character, and mobility. Using density-functional theory and a charge correction scheme to account for the appropriate boundary conditions, we conduct a comprehensive study of the effect of structure on the formation energy, electronic structure, and charge transition level of the charged vacancy point defects in phosphorene. We predict that the neutral vacancy exhibits a 9-5 ring structure with a formation energy of 1.7 eV and transitions to a negatively charged state at a Fermi level 1.04 eV above the valence band maximum. The corresponding optical charge transitions display sizeable Frank-Condon shifts with a large Stokes shift of 0.3 eV. Phosphorene vacancies should become negatively charged in n-doped phosphorene, which would passivate the dopants and reduce the charge carrier concentration and mobility.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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