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arXiv 2107.01660physics.app-ph
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激发能对InGaAs MQW结构热载流子性质的影响

Impact of excitation energy on hot carrier properties in InGaAs MQW structure

Hamidreza Esmaielpour, Laurent Lombez, Maxime Giteau, Jean-Francois Guillemoles, Daniel Suchet

摘要:

热载流子太阳能电池旨在通过抑制热载流子的热化并通过能量选择性接触提取热载流子来克服单结光伏器件的理论限制。设计高效的热载流子吸收体需要进一步研究材料中的热载流子特性。虽然热载流子的热化是太阳能电池中能量损失的主要原因,但它仍然是半导体中最不了解的现象之一。在这里,激发能的InGaAs多量子阱(MQW)结构中的光生热载流子的性质在不同的晶格温度和激发功率的影响进行了研究。样品的光致发光(PL)发射由高光谱发光成像仪检测,其产生光谱和空间分辨的PL图。热载流子的热力学性质,如温度和准费米能级分裂,仔细确定通过应用全PL谱拟合,解决了费米-狄拉克积分,并考虑带填充效应的纳米结构材料。此外,还研究了在两种激发能下,热化功率密度和载流子与纵向光学声子的散射对谱线展宽的影响。

英文摘要:

Hot carrier solar cells aim to overcome the theoretical limit of single-junction photovoltaic devices by suppressing the thermalization of hot carriers and extracting them through energy selective contacts. Designing efficient hot carrier absorbers requires further investigation on hot carrier properties in materials. Although the thermalization of hot carriers is responsible for a large portion of energy loss in solar cells, it is still one of the least understood phenomena in semiconductors. Here, the impact of excitation energy on the properties of photo-generated hot carriers in an InGaAs multi-quantum well (MQW) structure at various lattice temperatures and excitation powers is studied. Photoluminescence (PL) emission of the sample is detected by a hyperspectral luminescence imager, which creates spectrally and spatially resolved PL maps. The thermodynamic properties of hot carriers, such as temperature and quasi-Fermi level splitting, are carefully determined via applying full PL spectrum fitting, which solves the Fermi-Dirac integral and considers the band-filling effect in the nanostructured material. In addition, the impact of thermalized power density and carrier scattering with longitudinal optical phonons on the spectral linewidth broadening under two excitation energies is studied.

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