Si和C诱导的气相-固相生长InGaAs纳米线的改性：从晶体结构到载流子动力学
Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics
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中文总结 AI 辅助
本研究通过分子束外延生长Si和C掺杂InGaAs纳米线，发现C掺杂提高长径比和晶体质量但降低发光效率，并揭示了掺杂对载流子动力学的影响。
中文摘要 AI 辅助
确定三元III-V族纳米线（NWs）中掺杂剂的影响对于其在下一代光电子和光子器件中的应用至关重要；然而，在气相-固相（VS）生长的InGaAs纳米线中，掺杂剂种类、晶体结构和载流子动力学之间的相互作用仍未得到充分探索。本研究调查了硅（Si）和碳（C）掺杂对通过分子束外延制备的无催化剂、选区生长InGaAs纳米线的结构、形貌和光学性质的影响。扫描电子显微镜表明，与未掺杂纳米线相比，C掺杂使纳米线的长径比增加了超过100%，同时观察到其平面缺陷密度相应降低，表明C掺杂提高了晶体质量。尽管C掺杂纳米线具有优异的晶体质量，但由于点缺陷和表面复合速度的增加，其光致发光强度降低。时间分辨光致发光光谱进一步支持了这一点，揭示了C掺杂纳米线中加速的非辐射复合。最后，研究了这些纳米结构中的热载流子效应，其特征在Si和C掺杂纳米线中仍然可观察到，尽管强度有所降低。这项综合研究建立了掺杂参数与所得材料特性和载流子动力学之间的明确关联，为控制VS生长InGaAs纳米线的基本机制及其在光电子器件中的意义提供了宝贵的见解。
英文摘要
Determining the impact of dopants in ternary III-V nanowires (NWs) is crucial for their applications in next-generation optoelectronic and photonic devices; however, the interplay between dopant species, crystal structure, and carrier dynamics in vapor-solid-grown InGaAs NWs remains underexplored. In this study, the influence of silicon (Si) and carbon (C) doping on the structural, morphological, and optical properties of catalyst-free, selective-area grown InGaAs NWs fabricated by molecular beam epitaxy is investigated. Scanning electron microscopy demonstrates that C-doping increases the NW aspect ratio by over 100% compared to undoped NWs, while a concomitant decrease in their planar defect density is observed, indicating enhanced crystal quality with C-doping. Despite their superior crystal quality, the C-doped NWs present a diminished photoluminescence intensity, due to point defects and increased surface recombination velocity. This is further supported by time-resolved photoluminescence spectroscopy, revealing accelerated non-radiative recombination in the C-doped NWs. Lastly, hot-carrier effects in these nanostructures are studied, and their signatures remain observable, albeit with reduced intensity in both Si- and C-doped NWs. This comprehensive study establishes clear correlations between doping parameters and the resulting material characteristics and carrier dynamics, offering valuable insights into the fundamental mechanisms governing the VS-grown InGaAs NWs and their implications in optoelectronic devices.
发表机构
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich（沃尔特·肖特基研究所，慕尼黑工业大学自然科学学院）
- Institute of Physics and Astronomy, Technical University Berlin（柏林工业大学物理与天文研究所）
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