InGaN/GaN多量子阱在高温退火下的热稳定性与载流子复合动力学

中文摘要 AI 辅助

研究了覆盖有保护性AlN薄膜的原始InGaN/GaN多量子阱（MQW）结构在500°C至1100°C温度范围内一系列热退火处理后的热稳定性和载流子复合动力学。在室温下使用325 nm聚焦激光激发时，样品的光致发光（PL）光谱呈现三个发射带：位于363 nm的紫外峰、455 nm的蓝峰和565 nm的黄峰。我们发现，MQW在1100°C退火后仍保持455 nm发射。此外，研究了室温光致发光激发（PLE）和时间分辨光致发光（TRPL），以揭示样品的能量传递机制和发射衰减特性。功率依赖的PL光谱分析表明，MQW发射的载流子复合机制未受热处理影响。速率方程建模和色度坐标分析也显示，热处理对计算的等效发射寿命和发射颜色的影响有限。进行了飞行时间二次离子质谱（ToF-SIMS）分析，进一步证明了退火样品中MQW结构的保持。

英文摘要

The thermal stability and carrier recombination kinetics of an as-received InGaN/GaN multiple quantum well (MQW) structure, capped with a protective AlN thin film, are studied following a series of thermal annealings at temperatures between 500 deg C and 1100 deg C. Under 325 nm focused laser excitation at room temperature, the sample's photoluminescence (PL) spectrum exhibits three emission bands: an ultraviolet peak at 363 nm, a blue peak at 455 nm, and a yellow peak at 565 nm. We find that the MQW's 455 nm emission is preserved after annealing at 1100 deg C. Moreover, room-temperature PL excitation (PLE) and time-resolved PL (TRPL) have been investigated to shed light on the sample's energy-transfer mechanisms and emission decay characteristics. Power-dependent PL spectra analysis shows that the carrier recombination mechanism of the MQW's emission has not been affected by thermal treatment. Rate equation modelling and chromaticity coordinate analysis also show limited thermal impact on the calculated equivalent emission lifetime and emissive colour. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis has been performed, further evidencing the preservation of the MQW structure in the annealed sample.

发表机构

• University of Manchester（曼彻斯特大学）

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