arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 2106.06451cond-mat.mes-hallcond-mat.mtrl-sci
收藏

角分辨光探测磁共振作为纳米结构中应变测定的工具

Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

A. Bogucki, M. Goryca, A. Łopion, W. Pacuski, K. E. Połczyńska, J. Domagała, M. Tokarczyk, T. Fąs, A. Golnik, P. Kossacki

AI总结:

本文利用角分辨ODMR技术研究应变(Cd,Mn)Te/(Cd,Mg)Te量子阱,以neV精度测定自旋哈密顿量参数D,并结合光学反射率与X射线衍射评估局部应变,最终确定CdTe中Mn2+的应变自旋-晶格系数G11和剪切形变势b。

摘要:

在本文中,我们应用角分辨光探测磁共振(ODMR)技术研究一系列通过分子束外延制备的应变(Cd, Mn)Te/(Cd, Mg)Te量子阱(QWs)。通过分析ODMR角扫描的特征,我们以neV精度确定了应变诱导的轴对称自旋哈密顿量参数D。此外,我们利用低温光学反射率测量和X射线衍射扫描来评估量子阱材料中存在的局部应变。在分析中,我们考虑了GaAs衬底和CdTe缓冲层不同的热膨胀系数。由热膨胀效应引起的附加形变与样品不同组分引起的形变具有相同的量级。基于评估的形变和应变诱导的轴对称自旋哈密顿量参数D的值,我们得到CdTe中Mn2+的应变自旋-晶格系数G11 = (72.2 ± 1.9) neV,以及CdTe的剪切形变势b = (-0.94 ± 0.11) eV。

英文摘要:

In this paper, we apply the angle-resolved Optically Detected Magnetic Resonance (ODMR) technique to study series of strained (Cd, Mn)Te/(Cd, Mg)Te quantum wells (QWs) produced by molecular beam epitaxy. By analyzing characteristic features of ODMR angular scans, we determine strain-induced axial-symmetry spin Hamiltonian parameter D with neV precision. Furthermore, we use low-temperature optical reflectivity measurements and X-ray diffraction scans to evaluate the local strain present in QW material. In our analysis, we take into account different thermal expansion coefficients of GaAs substrate and CdTe buffer. The additional deformation due to the thermal expansion effects has the same magnitude as deformation origination from the different compositions of the samples. Based on the evaluated deformations and values of strain-induced axial-symmetry spin Hamiltonian parameter D, we find strain spin-lattice coefficient G11 = (72.2 +- 1.9) neV for Mn2+ in CdTe and shear deformation potential b = (-0.94 +- 0.11) eV for CdTe.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑