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arXiv 1807.01413cond-mat.mes-hall
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利用单量子纳米结构中的核自旋开关对电子和空穴离面g因子的符号识别

Sign identification of electron and hole out-of-plane g factors by utilizing nuclear spin switch in single quantum nanostructures

R. Matsusaki, R. Kaji, S. Yamamoto, S. Adachi

摘要:

电子和空穴的g因子是半导体量子纳米结构中自旋操纵的关键量。然而,对于单个的纳米结构,包括这些g因子的符号的单独测定是困难的,通过使用一些常规的方法在块体和量子阱中采用。我们报道了一种利用光致核自旋开关对单个量子纳米结构中的离面g因子进行符号识别的简便光学方法。该方法在典型的单自组装In $_{0.75}$ Al $_{0.25}$ As/Al $_{0.3}$ Ga $_{0.7}$ As量子点和InAs/GaAs量子环中得到了验证,证明了电子的g因子与空穴的g因子同号.

英文摘要:

The electron and hole g factors are the key quantities for the spin manipulations in semiconductor quantum nanostructures. However, for the individual nanostructures, the separate determination including the signs of those g factors is difficult by using some methods adopted conventionally in bulks and quantum wells. We report a convenient optical method for the sign identification of out-of-plane g factors in the individual quantum nanostructures, which utilizes the optically-induced nuclear spin switch. The method is demonstrated in typical single self-assembled In$_{0.75}$Al$_{0.25}$As/Al$_{0.3}$Ga$_{0.7}$As quantum dots and InAs/GaAs quantum rings, where the g factors with the opposite sign for electron and the same sign for hole are proved.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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