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arXiv 0908.1497cond-mat.mtrl-scicond-mat.mes-hall
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(Ga,Mn)As纳米结构的磁位形调控

Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures

J. A. Haigh, M. Wang, A. W. Rushforth, E. Ahmad, K. W. Edmonds, R. P. Campion, C. T. Foxon, B. L. Gallagher

摘要:

我们研究了由(Ga,Mn)As制备的L形纳米结构的磁性反转。由于光刻图案化导致的应变弛豫导致每个臂具有单轴磁各向异性。我们的分析证实,磁反转发生通过相干旋转和畴壁传播的组合与畴壁位于在磁滞回线的中间阶段的设备的角落。从我们的分析中可以提取畴壁能量。这样的器件已经在电流诱导的畴壁运动的研究中找到了实现,并且具有作为非易失性存储器元件的应用的潜力。

英文摘要:

We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the magnetic reversal takes place via a combination of coherent rotation and domain wall propagation with the domain wall positioned at the corner of the device at intermediate stages of the magnetic hysteresis loops. The domain wall energy can be extracted from our analysis. Such devices have found implementation in studies of current induced domain wall motion and have the potential for application as non-volatile memory elements.

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