适用于大电流高压工作的SiC功率MOSFET的紧凑模型
A Compact Model for SiC Power MOSFETs for Large Current and High Voltage Operation
摘要：
本文提出了一种基于物理的SiC功率MOSFET的紧凑模型，该模型能够准确描述大电压和大电流下的I-V特性。基于电荷的配方占SiC功率MOSFET的不同物理。该公式考虑了SiC/SiO2界面陷阱密度对SiC MOSFET特性的影响及其与温度的关系。界面电荷密度的建模被发现是必要的，以描述SiC功率MOSFET同时在高电流和高电压区域工作时的静电。所提出的紧凑模型准确地拟合了160毫欧姆，1200 V SiC功率MOSFET在完整的IV平面从漏极电压$V_d$ = 5 mV到800 V，电流范围从几mA到30 A的测量数据提取。
英文摘要：
This work presents a physics based compact model for SiC power MOSFETs that accurately describes the I-V characteristics up to large voltages and currents. Charge-based formulations accounting for the different physics of SiC power MOSFETs are presented. The formulations account for the effect of the large SiC/SiO2 interface traps density characteristic of SiC MOSFETs and its dependence with temperature. The modeling of interface charge density is found to be necessary to describe the electrostatics of SiC power MOSFETs when operating at simultaneous high current and high voltage regions. The proposed compact model accurately fits the measurement data extracted of a 160 milli ohms, 1200V SiC power MOSFET in the complete IV plane from drain-voltage $V_d$ = 5mV up to 800 V and current ranges from few mA to 30 A.
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