用于串联SiC MOSFET电压平衡的具有栅漏放电补偿的有源栅极驱动
Active Gate Drive with Gate-Drain Discharge Compensation for Voltage Balancing in Series-Connected SiC MOSFETs
摘要：
关断瞬态期间的不平衡电压分配是串联碳化硅（SiC）MOSFET应用的一个挑战。本文首先讨论了栅漏放电偏差对电压不平衡比的影响，分析了其产生的主要原因，并通过LTspice仿真进行了验证。因此，提出并分析了一种新型的有源栅极驱动器，其目的是补偿串联器件之间的放电差异。通过仅使用驱动IC的原始输出，所提出的栅极驱动通过在现有商业栅极驱动器上实现辅助电路来实现。因此，与其他用于平衡控制的有源栅极驱动器不同，不需要额外的电源/信号隔离，并且串联的器件数量不受限制。辅助电路包括用于调节开关性能的高带宽电流吸收器、用于闭环控制的相对低频但可靠的采样和控制电路以及将前者和后者相结合的触发器。详细介绍了各部分的工作原理和设计原则。实验结果验证了所提出的栅极驱动器及其电压平衡控制算法的性能。
英文摘要：
Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses the influence of the gate-drain discharge deviation on the voltage imbalance ratio, and its primary causes are also presented and verified by LTspice simulation. Accordingly, a novel active gate drive, which aims to compensate the discharge difference between devices connected in series, is proposed and analyzed. By only using the original output of the driving IC, the proposed gate drive is realized by implementing an auxiliary circuit on the existing commercial gate drive. Therefore, unlike other active gate drives for balancing control, no extra isolations for power/signal are needed, and the number of the devices in series is unlimited. The auxiliary circuit includes three sub-circuits as a high-bandwidth current sink for regulating switching performance, a relative low-frequency but reliable sampling and control circuit for closed-loop control, and a trigger combining the former and the latter. The operational principle and the design guideline for each part are presented in detail. Experimental results validate the performance of the proposed gate drive and its voltage balancing control algorithm.
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