海上极端环境下SiC-MOSFET可靠性评估加速寿命试验台架
Power Cycling Test Bench for Accelerated Life Testing for Reliability Assessment of SiC-MOSFET in Extreme Offshore Environment
摘要：
考虑到功率半导体开关在用于井下海底应用的电力电子转换器中的重要作用，功率半导体开关的可靠性非常重要。关于材料科学的技术进步，已经提出了具有宽带隙材料（诸如碳化硅（SiC）和氮化镓（GAN））的功率MOSFET作为现有的基于硅（Si）的MOSFET和IGBT的替代。然而，在用SiC-MOSFET代替现有的Si-MOSFET和IGBT之前，应该进行可靠性分析。由于用于加速寿命试验的实验测试装置设备昂贵，因此在实际硬件实现之前，需要使用良好可靠且精确的基于仿真的测试台来测试寿命试验过程。因此，本文介绍了一个电源循环（PC）试验台的加速寿命试验的可靠性评估的SiC-MOSFET在恶劣的海洋环境。介绍了一种基于SimScape和LTspice的功率开关仿真测试平台，并通过CREE对1.2 kV SiC-MOSFET（CAS 300 M12 BM 2）的仿真验证。初步的硬件电路也显示为进一步的实验测试。从被测器件（DUT）在不同的环境温度下捕获的数据被设想，并提供有关功率器件的故障机制和寿命特性的关键信息。所提供的SiC-MOSFET的寿命特性数据可用于统计估计诸如井下马达驱动器的实际应用中的组件的剩余有用寿命（RUL）。
英文摘要：
The reliability of power semiconductor switches is important when considering their vital role in power electronic converters for downhole subsea applications. Respect to technology advancements in material sciences, power MOSFETs with wide band gap materials have been proposed such as silicon carbide (SiC) and gallium nitride (GaN) as an alternative to existing silicon (Si) based MOSFETs and IGBTs. However, reliability analysis should be performed before substituting SiC-MOSFETs in the place of existing Si-MOSFETs and IGBTs. Due to costly equipment of experimental test setup for accelerated life test, a good reliable and precise simulation-based test bench should be used to test the life test procedure before implementing actual hardware. Therefore, this paper introduces a power cycle (PC) test bench for accelerated life testing for reliability assessment of SiC-MOSFET in harsh offshore environment. The introduced test bench is a simulation-based of power switch in SimScape and LTspice and has been validated with datasheet of 1.2 kV SiC-MOSFET, CAS300M12BM2 by CREE. Preliminary hardware circuits are also shown for further experimental tests. The captured data from the Device-Under-Test (DUT) in different ambient temperatures are envisioned and provide critical information about the failure mechanisms and lifetime characteristics of power devices. The provided lifetime characteristics data of SiC-MOSFET can be used to statistically estimate the Remaining-Useful-Lifetime (RUL) of component in a real application such as downhole motor drives.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
