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arXiv 2104.09599cond-mat.mes-hall
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用于高密度低功耗嵌入式应用的电压门辅助自旋轨道力矩磁随机存储器

Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application

Y. C. Wu, K. Garello, W. Kim, M. Gupta, M. Perumkunnil, V. Kateel, S. Couet, R. Carpenter, S. Rao, S. Van Beek, K. K. Vudya Sethu, F. Yasin, D. Crotti, G. S. Kar

摘要:

电压门辅助自旋-轨道力矩(VGSOT)写入方案结合了磁各向异性(VCMA)的电压控制和自旋-轨道力矩(SOT)效应的优点,使得磁性随机存取存储器(MRAM)应用具有多种益处。在这项工作中,我们给出了一个完整的描述垂直磁隧道结(pMTJ)器件的VGSOT写入性能,我们提出了一个详细的方法,其电气特性。使用低至400 ps的电脉冲的SOT开关特性上的栅极辅助的影响进行了研究。发现从电流开关方案中提取的VCMA系数(ξ)与从磁场开关方法中提取的VCMA系数(ξ)相同,对于80 nm至150 nm器件,其数量级为15 fJ/Vm。此外,从纯电子VCMA效应的预期,显示出的写入速度和栅极长度无关。我们观察到,SOT的开关电流特性与栅极电压(V_g)的线性修改,类似的磁性能。我们将这种线性行为解释为垂直磁各向异性(PMA)和由VCMA诱导的成核能的直接修改。在Vg = 1V时,SOT写入电流降低了25%,对应于本研究中使用的80 nm器件在400 ps速度下的总能量降低了45%,降至30 fJ/bit。此外,提出了设备缩放标准,我们发现,VGSOT计划是非常感兴趣的,因为它可以减轻复杂的材料要求,实现高SOT和VCMA参数缩放MTJ。最后,VGSOT-MRAM如何能够实现接近双端子几何形状的高密度阵列,具有高速性能和低功耗操作,显示出嵌入式存储器以及先进技术节点的存储器内计算应用的巨大潜力。

英文摘要:

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient (ξ) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm devices used in this study. Further, the device-scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes.

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