We report spatially resolved measurements of static and fluctuating electric fields over conductive (Au) and non-conductive (SiO2) surfaces. Using an ultrasensitive `nanoladder' cantilever probe to scan over these surfaces at distances of a few tens of nanometers, we record changes in the probe resonance frequency and damping that we associate with static and fluctuating fields, respectively. We find that the two quantities are spatially correlated and of similar magnitude for the two materials. We quantitatively describe the observed effects on the basis of trapped surface charges and dielectric fluctuations in an adsorbate layer. Our results provide direct, spatial evidence for surface dissipation in adsorbates that affects nanomechanical sensors, trapped ions, superconducting resonators, and color centers in diamond.
In monolayers of the semiconducting transition metal dichalcogenides, the electron-hole exchange interaction splits the exciton dispersion into a massive transverse branch, and a longitudinal branch that has very light or even zero mass depending on the form of screened Coulomb interaction. The group velocity of the longitudinal branch is sensitive to the strength of electron-hole exchange, which can be engineered through the dielectric environment. Here we show that dielectric patterning of the substrate can be exploited to realize waveguide of the exciton in the longitudinal branch in a homo…
For electrons above a superfluid helium film suspended on a specially designed dielectric substrate, $z=h(y)$, we obtain that both the transverse, along $z$, and the lateral, along $y$, quantizations are strongly enhanced due to a strong mutual coupling. The self-consistent quantum wires (QWs) with non-degenerated one-dimensional electron systems (1DESs) are obtained over a superfluid liquid helium (LH) suspended self-consistently on different dielectric substrates with a nanoscale modulation. A gap $\gtrsim 10$meV ($\gtrsim 1$meV) is obtained between the lowest two electron levels due to main…
We consider the fluctuation-induced (Casimir) pressure in peptide films deposited on GaAs, Ge, and ZnS substrates which are either in dielectric or metallic state. Calculations of the Casimir pressure are performed in the framework of fundamental Lifshitz theory employing the frequency-dependent dielectric permittivities of all involved materials. The electric conductivity of semiconductor substrates is taken into account within the experimentally and thermodynamically consistent approach. According to our results, the Casimir pressure in peptide films deposited on dielectric-type semiconducto…
Atomically thin materials are exceedingly susceptible to their dielectric environment. For transition metal dichalcogenides, sample placement on a substrate or encapsulation in hexagonal boron nitride (hBN) are frequently used. In this paper we show that the dielectric response due to optical phonons of adjacent materials influences excitons in 2d crystals. We provide an analytic model for the coupling of 2d charge carriers to optical substrate phonons, which causes polaron effects similar to that of intrinsic 2d phonons. We apply the model to hBN-encapsulated WSe2, finding a significant reduc…
High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects
我们在二氧化硅和聚甲基丙烯酸甲酯（PMMA）衬底上制作了二硫化钼场效应晶体管，并在四探针配置中测量了载流子迁移率。对于SiO2上的多层MoS 2，迁移率为30-60 cm 2/Vs，与厚度（15-90 nm）相对无关，并且大多数器件表现出单极n型行为。相比之下，PMMA上的多层MoS 2显示出随厚度增加的迁移率，在厚度约50 nm处高达470 cm 2/Vs（电子）和480 cm 2/Vs（空穴）。迁移率对厚度的依赖性指向在增加迁移率中的块状MoS 2的长程介电效应。
State-of-the-art nanomechanical resonators are heralded as a central component for next-generation clocks, filters, resonant sensors and quantum technologies. To practically build these technologies will require monolithic integration of microchips, resonators and readout systems. While it is widely seen that mounting microchip substrates into a system can greatly impact the performance of high-Q resonators, a systematic study has remained elusive, owing to the variety of physical processes and factors that influence the dissipation. Here, we analytically analyze a mechanism by which substrate…
Photoluminescence (PL) of transition metal dichalcogenide (TMD) monolayers is strongly influenced by the dielectric environment. The defect states present in the substrate induces uncontrollable doping in the TMD monolayer and thereby modifies the PL spectra. There have been enormous efforts to tune and overcome the effect of inevitable subtract defects in PL spectra, but a proper understanding and a convenient way are still lacking. Here, we systematically studied the effect of surface defects by gradually increasing the separation between WS2 monolayer and substrate. Hence, we could precisel…
Two-dimensional (2D) materials are increasingly being used as active components in nanoscale devices. Many interesting properties of 2D materials stem from the reduced and highly non-local electronic screening in two dimensions. While electronic screening within 2D materials has been studied extensively, the question still remains of how 2D substrates screen charge perturbations or electronic excitations adjacent to them. Thickness-dependent dielectric screening properties have recently been studied using electrostatic force microscopy (EFM) experiments. However, it was suggested that some of …
Understanding the physics underlying energy dissipation is necessary for the effective thermal management of devices based on two-dimensional (2D) materials and requires insights into the interplay between heat generation and diffusion in such materials. We review the microscopic mechanisms that govern Joule heating and energy dissipation processes in 2D materials such as graphene, black phosphorus and semiconducting transition metal dichalcogenides. We discuss the processes through which non-equilibrium charge carriers, created either transiently through photoexcitation or at steady state by …
Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride (TiN) film and sapphire substrate has good potential because of its chemical stability against oxidization, and high quality at interfaces. In this work, we report a TiN film deposited onto sapphire s…
We present a theoretical description of energy transfer processes between two noncontact quasi- twodimensional crystals separated by distance a, oscillating with frequency omega0 and amplitude rho0 , and compare it with the case of two quasi-twodimensional crystals in uniform parallel motion. We apply the theory to calculate van der Waals energy and dissipated energy in two oscillating slabs where each slab consists of a graphene monolayer deposited on SiO2 substrate. The graphene dielectric response is determined from first principles, and SiO2 surface response is described using empirical lo…
Understanding the limits of phononic heat dissipation from a two-dimensional layered material (2DLM) to its hexagonal boron nitride (h-BN) substrate and how it varies with the structure of the 2DLM is important for the design and thermal management of h-BN-supported nanoelectronic devices. We formulate an elasticity-based theory to model the phonon-mediated heat dissipation between a 2DLM and its h-BN substrate. By treating the h-BN substrate as a semi-infinite stack of harmonically coupled thin plates, we obtain semi-analytical expressions for the thermal boundary conductance (TBC) and interf…
In analogy to the observed for single plasmon-polaritons, we show that subdiffractional hyperbolic phonon-polariton (HP2) modes confined in hexagonal boron nitride (hBN) nanocrystals feature wave-particle duality. First, we use Synchrotron Infrared Nanospectroscopy to demonstrate modulation of the HP2 frequency-momentum dispersion relation and group velocity by varying the thickness of the SiO2 layer in the heterostructure hBN/SiO2/Au. These modulations are, then, exploited for the hBN crystal lying on a SiO2 wedge, with a gradient of thickness of such a dielectric medium, built into the Au su…
The Casimir free energy of peptide films on a silicon substrate: Impact of dielectric-to-metal transition in silicon and nanoparticles in peptide
Central Astronomical Observatory at Pulkovo of the Russian Academy of Sciences（俄罗斯科学院普尔科沃中央天文台）；Peter the Great Saint Petersburg Polytechnic University（彼得大帝圣彼得堡理工大学）
Compared to nanoscale friction of translational motion, the mechanisms of rotational friction have received less attention. Such motion becomes an important issue for the miniaturization of mechanical machineries which often involve rotating gears. In this study, molecular dynamics simulations are performed to explore rotational friction for solid-state gears rotating on top of different substrates. In each case, viscous damping of the rotational motion is observed and found to be induced by the pure van-der-Waals interaction between gear and substrate. The influence of different gear sizes an…
Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer transition metal dichalcogenide (TMD) semiconductors MoS$_{2}$ and WS$_{2}$, and model their electronic TBC with different dielectric substrates (SiO$_{2}$, HfO$_{2}$ and Al$_{2}$O$_{3}$). Our results indicate that the electronic TBC is strongly dependent on the electron density, suggesting that it can be modulated by the gate electrode in field-effect transistors,…
Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO2 to Al2O3 or SrTiO3, the rate constant for second-order exciton-exciton annihilation, k_XX [cm2/s], is reduced by one or two orders of magnitude, respectively. Using transient photoluminescence microscopy, we measure the effective room-temperature ex…
In this article, the results of investigation of processes occurring during the molecular-beam deposition of germanium layers on Si$_3$N$_4$ dielectric substrates within a wide range of the Ge film growth temperatures (30 to 600°C) are presented. The intensity of the IR absorption bands related to the vibrations of the N$-$H and Si$-$N bonds are established to decrease with the increase of the Ge deposition temperature. It appears that this phenomenon cannot be explained only as a thermally activated process. Simultaneously, the peak corresponding to the Ge$-$N vibration bonds emerges in the X…
A strategy aimed at decreasing dielectric loss in coplanar waveguides (CPW) and qubits involves the creation of trenches in the underlying substrate within the gaps of the overlying metallization. Participation of contamination layers residing on surfaces and interfaces in these designs can be reduced due to the change in the effective dielectric properties between the groundplane and conductor metallization. Although finite element method approaches have been previously applied to quantify this decrease, an analytical method is presented that can uniquely address geometries possessing small t…
Atomically thin layers of transition metal dichalcogenides (TMDCs) exhibit exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. The van der Waals nature of interlayer coupling makes it easy to integrate TMDC layers into heterostructures with different dielectric or metallic substrates. This allows to tailor electronic and optical properties of these materials, as Coulomb interaction inside atomically thin layers is very susceptible to screening by the environment. Here we theoretically inve…
