沉积在半导体衬底上的肽膜中的吸引和排斥涨落诱导的压力
Attractive and repulsive fluctuation-induced pressure in peptide films deposited on semiconductor substrates
摘要：
我们考虑了在GaAs、Ge和ZnS衬底上沉积的肽薄膜中的涨落诱导（Casimir）压力，这些衬底是介电态或金属态的。Casimir压力的计算是在基本Lifshitz理论的框架内进行的，采用所有相关材料的频率依赖的介电常数。半导体衬底的导电性被考虑在内的实验和物理一致的方法。根据我们的结果，Casimir压力在一定的薄膜厚度的肽薄膜沉积在介电型半导体衬底上为零，是排斥较薄的和较厚的膜吸引。这种效果上的水在膜中的分数和半导体衬底上的静态介电常数的依赖性被确定。对于金属型半导体衬底，肽涂层中的Casimir压力被证明总是排斥的。这些结果的可能应用的问题，在微器件中的薄涂层的稳定性进行了讨论。
英文摘要：
We consider the fluctuation-induced (Casimir) pressure in peptide films deposited on GaAs, Ge, and ZnS substrates which are either in dielectric or metallic state. Calculations of the Casimir pressure are performed in the framework of fundamental Lifshitz theory employing the frequency-dependent dielectric permittivities of all involved materials. The electric conductivity of semiconductor substrates is taken into account within the experimentally and thermodynamically consistent approach. According to our results, the Casimir pressure in peptide films deposited on dielectric-type semiconductor substrates vanishes for some definite film thickness, is repulsive for thinner and attractive for thicker films. The dependence of this effect on the fraction of water in the film and on the static dielectric permittivity of semiconductor substrate is determined. For the metallic-type semiconductor substrates, the Casimir pressure in peptide coatings is shown to be always repulsive. Possible applications of these results to the problem of stability of thin coatings in microdevices are discussed.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
