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arXiv 2103.10704cond-mat.mtrl-sci
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CuGaSe $_2$中$\Sigma3$晶界缺陷的第一性原理研究

First-principles study of defects at $\Sigma3$ grain boundaries in CuGaSe$_2$

R. Saniz, J. bekaert, B. Partoens, D. Lamoen

摘要:

本文采用第一性原理计算方法研究了CuGaSe $_2$中阳离子-Se的$Σ$ 3(112)晶界。我们讨论了这些晶界的结构,以及本征缺陷和Na杂质对它们的电子性质的影响。形成能表明,缺陷将倾向于优先形成在晶界,而不是在晶粒内部。我们发现,在富镓的生长条件下,铜空位,以及在铜和铜在镓反位的Ga是主要负责有平衡费米能级钉扎向中间的差距,导致载流子耗尽。处于+1电荷状态的Cu杂质处的Na对此有贡献。另一方面,在Ga-贫生长条件下,Cu空位和Ga在Cu反位的形成能对于载流子密度或平衡费米能级位置的任何显著影响都相对太高。因此,在这些条件下,在Ga反位的Cu引起$p$型晶界。此外,它们的形成能低于Na在Cu杂质处的形成能。因此,与CuInSe $_2$晶界中发生的情况相反,后者将不能充当防止晶界处的复合的空穴势垒。我们还讨论了体的CuGaSe $_2$,我们假设,反映了晶粒内部的性质的电子性质的缺陷的影响。

英文摘要:

We present a first-principles computational study of cation-Se $Σ$3 (112) grain boundaries in CuGaSe$_2$. We discuss the structure of these grain boundaries, as well as the effect of native defects and Na impurities on their electronic properties. The formation energies show that the defects will tend to form preferentially at the grain boundaries, rather than in the grain interiors. We find that in Ga-rich growth conditions Cu vacancies as well as Ga at Cu and Cu at Ga antisites are mainly responsible for having the equilibrium Fermi level pinned toward the middle of the gap, resulting in carrier depletion. The Na at Cu impurity in its +1 charge state contributes to this. In Ga-poor growth conditions, on the other hand, the formation energies of Cu vacancies and Ga at Cu antisites are comparatively too high for any significant influence on carrier density or on the equilibrium Fermi level position. Thus, under these conditions, the Cu at Ga antisites give rise to a $p$-type grain boundary. Also, their formation energy is lower than the formation energy of Na at Cu impurities. Thus, the latter will fail to act as a hole barrier preventing recombination at the grain boundary, in contrast to what occurs in CuInSe$_2$ grain boundaries. We also discuss the effect of the defects on the electronic properties of bulk CuGaSe$_2$, which we assume reflect the properties of the grain interiors.

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