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arXiv 2103.00317cond-mat.mtrl-sciphysics.app-ph
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亚稳氧化镓多晶型的离子束改性

Ion-Beam Modification of Metastable Gallium Oxide Polymorphs

D. I. Tetelbaum, A. A. Nikolskaya, D. S. Korolev, A. I. Belov, V. N. Trushin, Yu. A. Dudin, A. N. Mikhaylov, A. I. Pechnikov, M. P. Scheglov, V. I. Nikolaev, D. Gogova

摘要:

具有α-Ga 2 O3结构的氧化镓由于其独特的性质(包括超过最稳定的β相(\b{eta} -Ga 2 O3)的宽带隙)而在电子和光子应用方面最近引起了极大的关注。然而,与\b{eta} -相相比,α-相在环境条件下的较低的热稳定性需要仔细研究其对其他外部影响如离子辐照、离子掺杂等的耐受性。研究了氢化物气相外延生长的多晶氧化镓层在Al ~+离子辐照作用下的结构变化。主要由α相和α(\k{appa})相夹杂物组成。X射线衍射分析表明,辐照层中的α(\k{appa})相夹杂物沿基体表面法线方向发生膨胀,而α相没有明显的变形。这说明不同的Ga 2 O3多晶型物具有不同的耐辐射性,特别是α相具有更高的耐辐射性。在开发有效掺杂策略方面,当利用离子注入来改变氧化镓特性时,应考虑到这一事实。

英文摘要:

Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of its resistance to other external influences such as ion irradiation, ion doping, etc. In this work, the structural changes under the action of Al+ ion irradiation have been investigated for a polymorphic gallium oxide layers grown by hydride vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of α(\k{appa})-phase. It is established by the X-ray diffraction technique that inclusions of α(\k{appa})-phase in the irradiated layer undergo the expansion along the normal to the substrate surface, while there is no a noticeable deformation for the α-phase. This speaks in favor of the different radiation tolerance of various Ga2O3 polymorphs, especially the higher radiation tolerance of the α-phase. This fact should be taken into account when utilizing ion implantation to modify gallium oxide properties in terms of development of efficient doping strategies.

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