Films of all-important compound hafnia (HfO2) can be prepared in an orthorhombic ferroelectric (FE) state that is ideal for applications, e.g. in memories or negative-capacitance field-effect transistors. The origin of this FE state remains a mystery, though, as none of the proposed mechanisms for its stabilization -- from surface and size effects to formation kinetics -- is fully convincing. Interestingly, it is known that doping HfO2 with various cations favors the occurrence of the FE polymorph; however, existing first-principles works suggest that doping by itself is not sufficient to stabilize the polar phase over the usual non-polar monoclinic ground state. Here we use first-principles methods to reexamine this question. We consider two representative isovalent substitutional dopants, Si and Zr, and study their preferred arrangement within the HfO2 lattice. Our results reveal that small atoms like Si can adopt very stable configurations (forming layers within specific crystallographic planes) in the FE orthorhombic phase of HfO2, but comparatively less so in the non-polar monoclinic one. Further, we find that, at low concentrations, such a dopant ordering yields a FE ground state, the usual paraelectric phase becoming a higher-energy metastable polymorph. We discuss the implications of our findings, which constitute a definite step forward towards understanding ferroelectricity in HfO2.
Although dopants have been extensively employed to promote ferroelectricity in hafnia films, their role in stabilizing the responsible ferroelectric non-equilibrium Pca21 phase is not well understood. In this work, using first principles computations, we investigate the influence of nearly 40 dopants on the phase stability in bulk hafnia to identify dopants that can favor formation of the polar Pca21 phase. Although no dopant was found to stabilize this polar phase as the ground state, suggesting that dopants alone cannot induce ferroelectricity in hafnia, Ca, Sr, Ba, La, Y and Gd were found t…
The question of whether one can systematically identify (previously unknown) ferroelectric phases of a given material is addressed, taking hafnia (HfO$_2$) as an example. Low free energy phases at various pressures and temperatures are identified using a first-principles based structure search algorithm. Ferroelectric phases are then recognized by exploiting group theoretical principles for the symmetry-allowed displacive transitions between non-polar and polar phases. Two orthorhombic polar phases occurring in space groups $Pca2_1$ and $Pmn2_1$ are singled out as the most viable ferroelectric…
Ferroelectric hafnia is being explored for next generation electronics due to its robust ferroelectricity in nanoscale samples and its compatibility with silicon. However, its ferroelectricity is not understood. Other ferroelectrics usually lose their ferroelectricity for nanoscopic samples and thin films, and the hafnia ground state is non-polar baddeleyite. Here we study hafnia with density functional theory (DFT) under epitaxial strain, and find that strain not only stabilizes the ferroelectric phases, but also leads to unstable modes and a downhill path in energy from the high temperature …
We performed density functional theory (DFT) calculations on epitaxially strained hafnia. We demonstrate the stabilization of the ferroelectric ($Pca2_{1}$) phase from the antiferroelectric ($Pbcn$) in bulk hafnia in the presence of electric field. We found that the polar ($Pca2_{1}$) phase can be efficiently stabilized with an adequate choice of film orientation. We show that for a (010)-oriented Pbcn, the ferroelectric $Pca2_{1}$ phase can be reached with a relatively small electric field ($\mid\varepsilon\mid\geq 150$ KV/m). We thus provide a simple explanation to the experimental observati…
Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics along with phononic properties such as thermal conductivity, contraction, and heat capacity are under-explored, primarily due to the absence of high quality single crystals. Herein, we report the vibrational properties of a series of HfO2 crystals stabilized with yttrium (chemical formula HfO2:xY, where x = 20, 12, 11, 8, and 0%) and compare our findings with…
Twist-induced Out-of-plane Ferroelectricity in Bilayer Hafnia
Institute of Materials Science and Engineering, Washington University in St. Louis（华盛顿大学圣路易斯分校材料科学与工程研究所）；Department of Mechanical Engineering and Material Science, Washington University in St. Louis（华盛顿大学圣路易斯分校机械工程和材料科学系）；Department of Physics and Astronomy, University of Nebraska, Lincoln（内布拉斯加大学林肯分校物理与天文学系）；Department of Physics, Washington University in St. Louis（华盛顿大学圣路易斯分校物理系）
The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, the origin of ferroelectricity and in-depth studies of device characteristics are needed. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for a novel, superior device. Therefore, in this paper a holistic modeling approache…
Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by fir…
Engineering Grain Boundary Commensurability for Ferroelectric Stabilization in Hafnia-Based Films
Rice University（莱斯大学）；Rice Advanced Materials Institute, Rice University（莱斯大学先进材料研究所）；University of Pennsylvania（宾夕法尼亚大学）；Texas A&M University（德克萨斯农工大学）；University of California, Berkeley（加州大学伯克利分校）；Advanced Photon Source, Argonne National Laboratory（阿贡国家实验室先进光子源）；Smalley-Curl Institute, Rice University（莱斯大学斯马利-柯尔研究所）
Here, we optimized the annealing temperature of HZO/TiN thin film heterostructure via multiscale analysis of remnant polarization, crystallographic phase, minimum ferroelectric domain size, and average grain size. We found that the remnant polarization was closely related to the relative amount of the orthorhombic phase whereas the minimum domain size was to the relative amount of the monoclinic phase. The minimum domain size was obtained at the annealing temperature of 500$^\cird$C while the optimum remnant polarization and capacitance at the annealing temperature of 600$^\circ$C. We conclude…
Atom Probe Tomography as an Emerging Tool for Understanding Defect-driven Mechanisms in HfO$_{2}$-based Ferroelectrics
Norwegian University of Science and Technology (NTNU)（挪威科技大学）；Helmholtz-Zentrum Berlin für Materialien und Energie（柏林亥姆霍兹材料能源中心）；Freie Universität Berlin（柏林自由大学）；University of Nebraska, Lincoln（内布拉斯加大学林肯分校）；University of Duisburg-Essen（杜伊斯堡-埃森大学）；Research Center Future Energy Materials and Systems（未来能源材料与系统研究中心）
The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the growth window (temperature and oxygen pressure during deposition and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant ferroelectric polarization, up to around 24 uC/cm2, depends on the amount of orthorhombic phase and interplanar spacing and increases with temperature and pressure for a fixed film thickness. The leaka…
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm range, ferroelectric/dielectric double layer sandwiched between two symmetric metal electrodes are used. Due to the decoupling of the ferroelectric polarization storage layer and a dielectric tunneling l…
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al$_2$O$_3$ layer, the HZO demonstrates a remanent polarization (2Pr) of 19.2 $μC/cm^2$. An ex-situ, naturally oxidized sputtered Ta…
The ferroelectric properties of nanoscale silicon doped HfO$_2$ promise a multitude of applications ranging from ferroelectric memory to energy-related applications. The reason for the unexpected behavior has not been clearly proven and presumably include contributions from size effects and doping effects. Silicon incorporation in HfO$_2$ is investigated computationally by first-principles using different density functional theory (DFT) methods. Formation energies of interstitial and substitutional silicon in HfO$_2$ paired with and without an oxygen vacancy prove the substitutional defect as …
We present a comprehensive first principles study of doped hafnia in order to understand the formation of the ferroelectric orthorhombic [001] grains. Assuming that tetragonal grains are present during the early stages of growth, matching plane analysis shows that tetragonal [100] grains can transform into orthorhombic [001] during thermal annealing, when they are laterally confined by other grains. We show that among 0%, 2% and %4 Si doping, 4% doping provides the best conditions for the tetragonal [100] to orthorhombic [001] transformation. This also holds for Al doping. We also show that fo…
We provide a fundamental insight into the microscopic mechanisms of the ageing processes. Using large scale molecular dynamics simulations of the prototypical ferroelectric material PbTiO3, we demonstrate that the experimentally observed ageing phenomena can be reproduced from intrinsic interactions of defect-dipoles related to dopant-vacancy associates, even in the absence of extrinsic effects. We show that variation of the dopant concentration modifies the material's hysteretic response. We identify a universal method to reduce loss and tune the electromechanical properties of inexpensive ce…
Using density functional perturbation theory (DFPT) we computed the phonon frequencies, Raman and IR activities of hafnia polymorphs (P4$_{2}$nmc, Pca2$_{1}$, Pmn2$_{1}$, Pbca OI, brookite, and baddeleyite) for phase identification. We investigated the evolution of Raman and IR activities with respect to epitaxial strain and provide plots of frequency differences as a function of strain for experimental calibration and identification of the strain state of the sample. We found Raman signatures of different hafnia polymorphs: $ω(A_{1g})=300$ cm$^{-1}$ for P4$_{2}$nmc, $ω(A_{1})=343$ cm$^{-1}$ f…
Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices
INN-CONICET-CNEA（阿根廷国家原子能委员会-国家科学研究委员会研究所）；Universidad Argentina de la Empresa (UADE)（阿根廷企业大学）；Instituto de Nanociencia y Materiales de Aragón (INMA-CSIC)（阿拉贡纳米科学与材料研究所）；Universidad de Zaragoza（萨拉戈萨大学）；Catalan Institute of Nanoscience and Nanotechnology (ICN2)（加泰罗尼亚纳米科学与技术研究所）；Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay（巴黎萨克雷大学-CNRS纳米科学中心）；University of Groningen（格罗宁根大学）
Ferroelectric hafnium zirconium oxide (HZO) thin films show significant promise for applications in ferroelectric random-access memory, ferroelectric field-effect transistors, and ferroelectric tunneling junctions. However, there are shortcomings in understanding ferroelectric switching, which is crucial in the operation of these devices. Here a computational model based on phase field method is developed to simulate the switching behavior of polycrystalline HZO thin films. Furthermore, we introduce a novel approach to optimize the effective Landau coefficients describing the free energy of HZ…
In this work we analyze the finite-size effects on the structural properties and on the polarization of the rhombohedral phase of HfO$_2$ subjected to a biaxial compressive strain. We show how the presence of surface charges affects the polarization, leading to a strong reduction with respect to its bulk value. This reduction can be ascribed to two mechanisms: the coupling between compressive strain and the phase-transition order parameter; the changes in the ferroelectric distortion. We give two alternative explanations of this phenomenon: from an atomistic point of view, analyzing the evolut…
We have investigated the effect of transition metal dopants on the local structure of the prototypical 0.75 Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$-0.25 PbTiO$_3$ relaxor ferroelectric. We find that these dopants give rise to very different local structure and other physical properties. For example, when Mg is partially substituted by Cu or Zn, the displacement of Cu or Zn is much larger than that of Mg, and is even comparable to that of Nb. The polarization of these systems is also increased, especially for the Cu-doped solution, due to the large polarizability of Cu and Zn. As a result, the predicted …
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen conducting metals (La0.67Sr0.33MnO3, LSMO) as electrodes, using atomic resolution electron microscopy while in situ electrical biasing. By direct oxygen imaging, we observe reversible oxygen vacancy migration from the bottom to the top electrode through HZO and reveal associated r…
