arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2102.12004cond-mat.mtrl-sciphysics.comp-phphysics.optics
收藏

电子-空穴相互作用弹道电流的第一性原理计算

First Principles Calculation of Ballistic Current from Electron-Hole Interaction

Zhenbang Dai, Andrew M. Rappe

摘要:

体光生伏打效应(BPVE)由于其克服传统光生伏打效率限制的潜力而引起了人们越来越多的兴趣,并且人们一直致力于了解其基础物理。然而,以前的工作已经表明,在实际材料中的移位电流和声子辅助的弹道电流的理论模型并不能完全解释实验BPVE光电流,因此应该研究其他机制,以获得BPVE的全貌。在这封信中,我们展示了两种方法,使从头计算的弹道电流起源于半导体中的电子-空穴相互作用。以BaTiO $_3$和MoS $_2$为例,我们清楚地表明,对于它们,电子-空穴相互作用的非对称散射比电子-声子相互作用的非对称散射要小,这表明需要包括更多的散射过程来进一步改进BPVE理论.此外,我们的方法建立了一个场地,预测和设计的材料具有较大的弹道电流,由于电子-空穴相互作用。

英文摘要:

The bulk photovoltaic effect (BPVE) has attracted an increasing interest due to its potential to overcome the efficiency limit of traditional photovoltaics, and much effort has been devoted to understanding its underlying physics. However, previous work has shown that theoretical models of the shift current and the phonon-assisted ballistic current in real materials do not fully account for the experimental BPVE photocurrent, and so other mechanisms should be investigated in order to obtain a complete picture of BPVE. In this Letter, we demonstrate two approaches that enable the ab initio calculation of the ballistic current originating from the electron-hole interaction in semiconductors. Using BaTiO$_3$ and MoS$_2$ as two examples, we show clearly that for them the asymmetric scattering from electron-hole interaction is less appreciable than that from electron-phonon interaction, indicating more scattering processes need to be included to further improve the BPVE theory. Moreover, our approaches build up a venue for predicting and designing materials with larger ballistic current due to electron-hole interactions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑