arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2102.10973cond-mat.mtrl-sci
收藏

普适结构对SrTiO $_3$表面二维电子气的影响

Universal Structural Influence on the 2D Electron Gas at SrTiO$_3$ Surfaces

Eduardo B. Guedes, Stefan Muff, Walber H. Brito, Marco Caputo, Nicholas C. Plumb, J. Hugo Dil, Milan Radović

摘要:

在SrTiO $_3$表面和相关界面发现的二维电子气作为氧化物电子学的一个有前途的基础引起了人们的极大关注。为了充分利用其潜力,必须详细了解这种2DEG对结构变化和表面改性的响应。在这里,我们提出了一个详细的电子结构演化的2DEG作为样品温度和表面台阶密度的函数的研究。通过比较我们的实验结果与\textit{ab initio}计算,我们发现,一个SrO丰富的表面层是电子限制的先决条件。我们还发现局域结构弛豫导致了系统在135 K附近的金属-绝缘体转变。我们的研究提出了一种新的和简单的方式调整的二维电子气通过表面附近,并确定如何操作的前瞻性设备将响应温度的变化。

英文摘要:

The two-dimensional electron gas found at the surface of SrTiO$_3$ and related interfaces has attracted significant attention as a promising basis for oxide electronics. In order to utilize its full potential, the response of this 2DEG to structural changes and surface modification must be understood in detail. Here, we present a study of the detailed electronic structure evolution of the 2DEG as a function of sample temperature and surface step density. By comparing our experimental results with \textit{ab initio} calculations, we found that a SrO-rich surface layer is a prerequisite for electronic confinement. We also show that local structure relaxations cause a metal-insulator transition of the system around 135~K. Our study presents a new and simple way of tuning the 2DEG via surface vicinality and identifies how the operation of prospective devices will respond to changes in temperature.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑