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arXiv 2102.03337cond-mat.mtrl-sci
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压力诱导CsSnBr₃钙钛矿中的半导体-金属相变

Pressure induced semiconductor to metal phase transition in CsSnBr3 perovskite

Md. Sajib Hossain, Md. Majibul Haque Babu, Tusar Saha, Md. Sazzad Hossain, Jiban Podder, Md. Shohel Rana, Md. Abdul Barik, Protima Rani

AI总结:

本研究通过基于密度泛函理论的第一性原理计算,探究0-16 GPa静水压下无铅CsSnBr₃钙钛矿的物理特性,发现其会发生半导体-金属相变,且光学、力学性能随压力变化,为相关应用提供参考。

摘要:

由外部刺激触发的金属卤化物钙钛矿相变会产生显著不同的材料特性,为广泛应用提供了巨大机遇。本研究借助密度泛函理论(DFT),使用CASTEP代码开展了第一性原理计算,以研究无铅CsSnBr₃金属卤化物在不同静水压下的物理特性。压力作用范围设定为0-16 GPa。随后观察到,随着压力升高,晶格常数和体积发生显著变化。电子能带结构显示,在高压下发生半导体到金属的相变。光学函数研究表明,当压力提升至16 GPa时,CsSnBr₃钙钛矿的吸收边显著向低能区移动(红移)。此外,吸收率和介电常数也随施加的静水压升高而增大。最后,力学性能研究表明CsSnBr₃钙钛矿具有力学稳定性和高延展性,且延展性随压力升高而增强。这类半导体-金属相变有望激发广泛的潜在应用。

英文摘要:

Phase transitions in metal halide perovskites triggered by external provocations produce significantly different material properties, providing a prodigious opportunity for a comprehensive applications. In the present study, the first principles calculation has been performed with the help of density functional theory (DFT) using CASTEP code to investigate the physical properties of lead-free CsSnBr3 metal halide under various hydrostatic pressures. The pressure effect is determined in the range of 0-16 GPa. Subsequently, a significant change is observed in lattice constant and volume with increasing pressure. The electronic band structure show semiconductor to metal phase transition under elevated pressure. The investigation of optical functions displays that the absorption edge of CsSnBr3 perovskite is shifted remarkably toward the low energy region (red shift) with improved pressure up to 16 GPa. In addition, the absorptivity and dielectric constant also upsurges with the applied hydrostatic pressure. Finally, the mechanical properties reveal that CsSnBr3 perovskite is mechanically stable and highly ductile; the ductility is increased with raising pressure. This type of semiconductor to metal phase transition may inspire a wide range of potential applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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