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arXiv 2101.03310cond-mat.mes-hallcond-mat.mtrl-sci
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MoS2-SiO2和WS2-SiO2界面热边界传导的理论分析

Theoretical analysis of thermal boundary conductance of MoS2-SiO2 and WS2-SiO2 interface

Zhun-Yong Ong, Yongqing Cai, Gang Zhang, Yong-Wei Zhang

摘要:

了解界面热传递中涉及的物理过程对于解释基于过渡金属二硫属化物(TMD)半导体的纳米电子器件中的温度测量和散热优化至关重要。我们模拟了声子和电子对MoS $_{2}$ -SiO $_{2}$和WS $_{2}$ -SiO $_{2}$界面的热边界电导(TBC)变化的贡献。引入了一种模拟无序界面扩散声子输运的唯象理论,得到300 K时MoS $_{2}$ -SiO $_{2}$和WS $_{2}$-SiO $_{2} $界面的$G$分别为13.5和12.4 MW/K/mPDMATHABMO.我们比较了它的预测的相干声子模型,发现前者符合的MoS $_{2}$ -SiO $_{2}$的数据从实验和模拟显着更好。我们的分析表明,热耗散在TMD-SiO $_{2}$接口主要是由声子散射扩散粗糙的界面,虽然电子TBC的贡献可以是显着的,即使在低电子密度($n\leq10^{12}$ cm $^{-2}$),并可以解释一些从文献中的实验TBC数据的变化。从我们的研究的物理见解可以是有用的热意识的设计在TMD为基础的纳米电子学的发展。

英文摘要:

Understanding the physical processes involved in interfacial heat transfer is critical for the interpretation of thermometric measurements and the optimization of heat dissipation in nanoelectronic devices that are based on transition metal dichalcogenide (TMD) semiconductors. We model the phononic and electronic contributions to the thermal boundary conductance (TBC) variability for the MoS$_{2}$-SiO$_{2}$ and WS$_{2}$-SiO$_{2}$ interface. A phenomenological theory to model diffuse phonon transport at disordered interfaces is introduced and yields $G$=13.5 and 12.4 MW/K/m$^{2}$ at 300 K for the MoS$_{2}$-SiO$_{2}$ and WS$_{2}$-SiO$_{2} $ interface, respectively. We compare its predictions to those of the coherent phonon model and find that the former fits the MoS$_{2}$-SiO$_{2}$ data from experiments and simulations significantly better. Our analysis suggests that heat dissipation at the TMD-SiO$_{2}$ interface is dominated by phonons scattered diffusely by the rough interface although the electronic TBC contribution can be significant even at low electron densities ($n\leq10^{12}$ cm$^{-2}$) and may explain some of the variation in the experimental TBC data from the literature. The physical insights from our study can be useful for the development of thermally aware designs in TMD-based nanoelectronics.

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