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arXiv 0910.2747cond-mat.mes-hallcond-mat.mtrl-sci
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碳纳米管与SiO2界面导热的分子动力学模拟

Molecular Dynamics Simulation of Thermal Boundary Conductance Between Carbon Nanotubes and SiO2

Zhun-Yong Ong, Eric Pop

摘要:

采用非平衡分子动力学模拟研究了碳纳米管与SiO2之间的热能耦合。发现每单位CNT长度的热边界电导(g)与范德华相互作用的强度(~X)成比例,与CNT直径(~D)成比例,并且作为温度的弱幂律(~T^1/3在200-600 K之间)。SiO2上单个CNT的热弛豫时间与直径无关,τ ~ 85 ps。对于室温下直径为1.7 nm的CNT,标准参数组g约为0.1 W/m/K。我们的研究结果是可比的,并解释了从直径,温度或表面相互作用强度的细节的变化的CNT-SiO2热耦合的实验值的范围。

英文摘要:

We investigate thermal energy coupling between carbon nanotubes (CNTs) and SiO2 with non-equilibrium molecular dynamics simulations. The thermal boundary conductance (g) per unit CNT length is found to scale proportionally with the strength of the Van der Waals interaction (~X), with CNT diameter (~D), and as a weak power law of temperature (~T^1/3 between 200-600 K). The thermal relaxation time of a single CNT on SiO2 is independent of diameter, tau ~ 85 ps. With the standard set of parameters g ~ 0.1 W/m/K for a 1.7 nm diameter CNT at room temperature. Our results are comparable to, and explain the range of experimental values for CNT-SiO2 thermal coupling from variations in diameter, temperature, or details of the surface interaction strength.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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