基于热串扰的存储器计算相变逻辑
Phase Change Logic via Thermal Cross-Talk for Computation in Memory
摘要：
我们已经通过计算证明了使用与CMOS电路集成的横向和垂直多触点相变器件的逻辑功能实现，该器件使用热串扰作为耦合机制来在较小的CMOS足迹上实现逻辑功能。在写操作期间的热串扰被用来使先前非晶化的区域再结晶以实现切换操作。在不同的写接触对之间形成的非晶化区域被用来隔离读接触。使用所描述的用于切换复用、JK复用和2x2布线的方法，CMOS占用面积的典型预期减少约50%。相变装置的开关速度为纳秒量级，并且固有地是非易失性的。具有动态材料模型的电热建模框架用于捕获器件动态以及电流和电压要求。
英文摘要：
We have computationally demonstrated logic function implementations using lateral and vertical multi-contact phase change devices integrated with CMOS circuitry, which use thermal cross-talk as a coupling mechanism to implement logic functions at smaller CMOS footprints. Thermal-crosstalk during the write operations is utilized to recrystallize the previously amorphized regions to achieve toggle operations. Amorphized regions formed between different pairs of write contacts are utilized to isolate read contacts. Typical expected reduction in CMOS footprint is ~ 50% using the described approach for toggle-multiplexing, JK-multiplexing and 2x2 routing. The switching speeds of the phase change devices are in the order of nanoseconds and are inherently non-volatile. An electro-thermal modeling framework with dynamic materials models are used to capture the device dynamics, and current and voltage requirements.
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