单自旋轨道矩器件中的可重构自旋逻辑与高密度多态存储器
Reconfigurable Spin Logics and High-density Multistate Memory in a Single Spin-orbit Torque Device
AI总结：
本研究将自旋轨道矩与面外磁场结合，在单个W/Pt/Co/AlOx异质结SOT器件中实现可重构多态逻辑运算，并通过两步写入工艺达成SOT基器件最高多态存储密度，为高密度多功能存内逻辑器件提供新路径。
摘要：
基于自旋轨道矩（SOT）机制的非易失性器件非常适用于存内逻辑运算。当前的目标是在同一存储单元内执行逻辑运算的同时，提高存储单元的存储密度。本研究表明，将SOT与面外磁场相结合，可在垂直磁化异质结中有效实现多种磁态。本研究进一步探索了该方法，采用W/Pt/Co/AlOx异质结，在单个SOT器件中通过实验验证了可重构逻辑运算。我们的结果显示，通过SOT与面外磁场集成实现的多态调谐，可在单个器件内完成包括AND、OR、NOR、NAND和Always ON在内的可重构逻辑运算。此外，我们发现，通过精心选择输入逻辑运算，可在单个存储器件中通过多种配置实现相同的逻辑功能。为提高多态存储密度，我们提出并通过实验验证了一种两步写入工艺，实现了目前已报道的SOT基存储器件中最高的多态存储密度。这些发现凸显了整合SOT与磁场效应以实现高密度、多功能存内逻辑器件的潜力。
英文摘要：
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same memory unit. Present study demonstrates that integrating SOT with an out-of-plane magnetic field effectively achieves multiple magnetic states in perpendicularly magnetized heterostructures. This study further explores this approach, experimentally demonstrating reconfigurable logic operations within a single SOT device using W/Pt/Co/AlOxheterostructures. Our results show that multistate tuning by SOT integration with out-of-plane magnetic field enables reconfigurable logic operations, including AND, OR, NOR, NAND, and Always ON, within a single device. Additionally, we found that careful selection of input logic operations allows multiple configurations to achieve the same logic function within a single memory device. To enhance multistate memory density, we proposed and experimentally verified a two-step writing process, achieving the highest reported multistate memory density in SOT-based memory devices. These findings highlight the potential of integrating SOT and magnetic field effects to realize high-density, multifunctional in-memory logic devices.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
