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arXiv 2101.00511physics.ins-det
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一种实现具有碰撞电离增益的硅二极管探测器高粒度的新方法

A new approach to achieving high granularity for silicon diode detectors with impact ionization gain

S. Ayyoub, C. Gee, R. Islam, S. M. Mazza, B. Schumm, A. Seiden, Y. Zhao

摘要:

低增益雪崩二极管(LGAD)是薄(20-50 $μm$)硅二极管传感器,具有适度的内部增益(通常为5至50)和出色的时间分辨率(17 $ps$至50 $ps$)。然而,由于需要在读出焊盘的边界处包括保护结构以避免由于大的局部电场而导致的过早击穿,因此这种器件的粒度限于毫米级。在本文中,我们提出了一种新的方法-深结LGAD(DJ-LGAD)-从读出平面的高场增益区。这种方法预计将可实现的LGAD粒度提高到数十微米级,同时保持分段电极上的直接电荷收集。

英文摘要:

Low Gain Avalanche Diodes (LGADs) are thin (20-50 $μm$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the millimeter scale due to the need to include protection structures at the boundaries of the readout pads to avoid premature breakdown due to large local electric fields. In this paper we present a new approach -- the Deep-Junction LGAD (DJ-LGAD) -- that decouples the high-field gain region from the readout plane. This approach is expected to improve the achievable LGAD granularity to the tens-of-micron scale while maintaining direct charge collection on the segmented electrodes.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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