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arXiv 1702.00873physics.ins-detastro-ph.IMnucl-ex
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硅中核反冲电离效率的测量

A measurement of the ionization efficiency of nuclear recoils in silicon

F. Izraelevitch, D. Amidei, A. Aprahamian, R. Arcos-Olalla, G. Cancelo, C. Casarella, A. E. Chavarria, P. Collon, J. Estrada, G. Fernández Moroni, Y. Guardincer… 展开作者

F. Izraelevitch, D. Amidei, A. Aprahamian, R. Arcos-Olalla, G. Cancelo, C. Casarella, A. E. Chavarria, P. Collon, J. Estrada, G. Fernández Moroni, Y. Guardincerri, G. Gutiérrez, A. Gyurjinyan, A. Kavner, B. Kilminster, A. Lathrop, J. Liao, Q. Liu, M. López, J. Molina, P. Privitera, M. A. Reyes, V. Scarpine, K. Siegl, M. Smith, S. Strauss, W. Tan, J. Tiffenberg, L. Villanueva

摘要:

我们测量了动能在1.8 - 20 keV之间的硅核反冲的电离效率。我们用中子束轰击硅漂移二极管进行弹性散射实验。使用宽能中子谱,并使用散射中子的飞行时间和散射角的测量来重建核反冲能。Lindhard等人的理论很好地描述了这项工作的结果的总体趋势。超过4 keV的反冲能量。低于该能量,所呈现的数据显示出与模型的偏差。数据表明在低能量下比理论预测更快的下降。

英文摘要:

We have measured the ionization efficiency of silicon nuclear recoils with kinetic energy between 1.8 and 20 keV. We bombarded a silicon-drift diode with a neutron beam to perform an elastic-scattering experiment. A broad-energy neutron spectrum was used and the nuclear recoil energy was reconstructed using a measurement of the time of flight and scattering angle of the scattered neutron. The overall trend of the results of this work is well described by the theory of Lindhard et al. above 4 keV of recoil energy. Below this energy, the presented data shows a deviation from the model. The data indicates a faster drop than the theory prediction at low energies.

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