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arXiv 2012.14478cond-mat.mes-hall
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半满朗道能级

The Half-Full Landau Level

Bertrand I. Halperin

摘要:

在偶数分母朗道能级填充分数,如$ν=1/2$,基态,在大多数情况下,没有能隙,没有量子化的霍尔电导的平台。尽管如此,这些状态表现出非平凡的低能现象。在过去的几年中,关于这些系统的适当描述的公开问题再次引起了人们的注意。在$ν=1/2$的问题包括粒子-空穴对称性的后果,这应该是目前的自旋对齐系统的限制,其中可以忽略朗道能级之间的混合。其他问题涉及各向异性和几何形状的问题,在非零温度下的性质,以及相对较强的无序的影响。在确实发现有带隙的偶分母量子化霍尔态的情况下,如GaAs结构中的$ν=5/2$,人们对量子态的性质产生了重大的疑问,这将在本章中简要讨论。本章还将讨论在接近半填充的双组分系统中可能发生的现象,即,当总填充因子$ν_{\rm{tot}} $接近1时。

英文摘要:

At even-denominator Landau level filling fractions, such as $ν=1/2$, the ground state, in most cases, has no energy gap, and there is no quantized plateau in the Hall conductance. Nevertheless, the states exhibit non-trivial low-energy phenomena. Open questions concerning the proper description of these systems have attracted renewed attention during the last few years. Issues at $ν=1/2$ include consequences of particle-hole symmetry, which should be present for a spin-aligned system in the limit where one can neglect mixing between Landau levels. Other issues concern questions of anisotropy and geometry, properties at non-zero temperature, and effects of relatively strong disorder. In cases where one does find a gapped even-denominator quantized Hall state, such as $ν=5/2$ in GaAs structures, major questions have arisen about the nature of the quantum state, which will be discussed briefly in this chapter. The chapter will also discuss phenomena that can occur in a two-component system near half filling, i.e., when the total filling factor $ν_{\rm{tot}} $ is close to 1.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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