Efficient Type II Second Harmonic Generation in an Indium Gallium Phosphide on insulator wire waveguide aligned with a crystallographic axis
Nicolas Poulvellarie, Carlos Mas Arabi, Charles Ciret, Sylvain Combrié, Alfredo De Rossi, Marc Haelterman, Fabrice Raineri, Bart Kuyken, Simon-Pierre Gorza, François Leo
We theoretically and experimentally investigate type II second harmonic generation in III-V-on-insulator wire waveguides. We show that the propagation direction plays a crucial role and that longitudinal field components can be leveraged for robust and efficient conversion. We predict that the maximum theoretical conversion is larger than that of type I second harmonic generation for similar waveguide dimensions and reach an experimental conversion efficiency of 12 %/W, limited by the propagation loss.
We demonstrate the simultaneous generation of second and third harmonic signals from a telecom wavelength pump in a gallium phosphide (GaP) microdisk. Using analysis of the power scaling of both the second and third harmonic outputs and calculations of nonlinear cavity mode coupling factors, we study contributions to the third harmonic signal from direct and cascaded sum frequency generation processes. We find that despite the relatively high material absorption in gallium phosphide at the third harmonic wavelength, both of these processes can be significant, with relative magnitudes that depe…
Photonic crystal nanocavities at visible wavelengths are fabricated in a high refractive index (n>3.2) gallium phosphide membrane. The cavities are probed via a cross-polarized reflectivity measurement and show resonances at wavelengths as low as 645 nm at room temperature, with quality factors between 500 and 1700 for modes with volumes 0.7(lambda/n)^3. These structures could be employed for submicron scale optoelectronic devices in the visible, and for coupling to novel emitters with resonances in the visible such as nitrogen vacancy centers, and bio- and organic molecules.
We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion efficiency $P_{\rm out}/P_{\rm in, coupled}^2 = 430%/{\rm W}$. The large electronic band gap of GaP minimizes absorption loss, allowing efficient conversion. Our results are promising for integrated, low-power light sources and on-chip reduction of input power in other nonlinear processes.
We report a femtosecond optical parametric oscillator (OPO) based on the new semiconductor gain material orientation patterned gallium phosphide (OP-GaP), which enables the production of high-repetition-rate femtosecond pulses spanning 5-12 μm with average powers in the few to tens of milliwatts range. This is the first example of a broadband OPO operating across the molecular fingerprint region, and we demonstrate its potential by conducting broadband Fourier-transform spectroscopy using water vapor and a polystyrene reference standard.
We designed, fabricated and tested gallium phosphide (GaP) nano-waveguides for second harmonic generation (SHG). We demonstrate SHG in the visible range around 655 nm using low power continuous-wave pump in the optical communication O-band. Our structures utilize modal phase matching, such that lower order eigenmodes of the pump are phase matched to higher order eigenmodes of the second harmonic. We observe phase matched SHG for different combinations of interacting modes by varying the widths of the waveguides and tuning the wavelength of the pump. The presented results contribute to the deve…
This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with extended photonic crystal waveguide membranes. Furthermore, SUI makes available various fiber-coupli…
Gallium phosphide offers an attractive combination of a high refractive index ($n>3$ for vacuum wavelengths up to 4 μm) and a wide electronic bandgap (2.26 eV), enabling optical cavities with small mode volumes and low two-photon absorption at telecommunication wavelengths. Heating due to strongly confined light fields is therefore greatly reduced. Here, we investigate the benefits of these properties for cavity optomechanics. Utilizing a recently developed fabrication scheme based on direct wafer bonding, we realize integrated one-dimensional photonic crystal cavities made of gallium phosphid…
Resonant metasurfaces are an attractive platform for enhancing the non-linear optical processes, such as second harmonic generation (SHG), since they can generate very large local electromagnetic fields while relaxing the phase-matching requirements. Here, we take this platform a step closer to the practical applications by demonstrating visible range, continuous wave (CW) SHG. We do so by combining the attractive material properties of gallium phosphide with engineered, high quality-factor photonic modes enabled by bound states in the continuum. For the optimum case, we obtain efficiencies ar…
Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures < 50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900 +/- 0.081 ns and 1.098 +/- 0.063 ns, respectively, using this method.
Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by Whispering Gallery modes.
The SERS spectra of the phthalocianine molecule, adsorbed on the gallium phosphide substrate are investigated. It is demonstrated that there appear strong lines, which are forbidden in usual Raman scattering. Analysis of the spectra indicates that these lines are associated with a strong quadrupole light-molecule interaction and also by a strong enhancement of the tangential components of the electric field on the surface. As it was demonstrated earlier, the last effect is characteristic for SERS on semiconductor and dielectric substrates, where there is the enhancement not only of the normal,…
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of $10^4$. Post-fabricati…
Second harmonic conversion from 1550~nm to 775~nm with an efficiency of 400% W$^{-1}$ is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring resonators with quality factors $Q \sim 10^4$, low mode volumes $V \sim 30 (λ/n)^3$, and high nonlinear mode overlaps. Measurements and simulations indicate that conversion efficiencies can be increased by a factor of 20 by improving the waveguide-cavity coupling to achieve critical coupling in current devices.
We present efficient coupling of single organic molecules to a gallium phosphide subwavelength waveguide (nanoguide). By examining and correlating the temporal dynamics of various single-molecule resonances at different locations along the nanoguide, we reveal light-induced fluctuations of their Stark shifts. Our observations are consistent with the predictions of a simple model based on the optical activation of a small number of charges in the GaP nanostructure.
We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at saturation pump power. For the complementary difference frequency generation process, a single photon conversion efficiency of 7.2%/mW from visible to telecom is projected for resonators with optimized coup…
Engineering the dispersion of light in a metasurface allows for controlling the light-matter interaction strength between light confined in the metasurface and materials placed within its near-field. Specifically, engineering a flatband dispersion increases the photonic density of states thereby enhancing the light-matter interaction. Here, we experimentally demonstrate a metasurface with a flat dispersion at visible wavelengths. We designed and fabricated a suspended one-dimensional gallium phosphide metasurface and measured the photonic band structure via energy-momentum spectroscopy, observ…
We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors $ > 2.8\times10^{5}$ and mode volumes $< 10 (λ/n)^3$, and study their nonlinear and optomechanical properties. For optical intensities up to $8.0\times10^4$ intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5 $μ$m and several mechanical res…
Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference between the frequencies can add significant noise to the transduced signal. Here we exploit the remarkable properties of thin-film gallium phosphide to demonstrate bi-directional on-chip conversion between microwave and optical frequencies, realized by piezoelectric actuation of a Gigahertz-frequency optomechanical resonator. The large optomechanical coupling …
Nanoparticles made of non-noble metals such as gallium have recently attracted significant attention due to promising applications in UV plasmonics. To date, experiments have mostly focused on solid and liquid pure gallium particles immobilized on solid substrates. However, for many applications, colloidal liquid-metal nanoparticle solutions are vital. Here, we experimentally demonstrate strong UV plasmonic resonances of eutectic gallium-indium (EGaIn) liquid-metal alloy nanoparticles suspended in ethanol. We rationalise experimental results through a theoretical model based on Mie theory. Our…
Electrically actuated optomechanical resonators provide a route to quantum-coherent, bidirectional conversion of microwave and optical photons. Such devices could enable optical interconnection of quantum computers based on qubits operating at microwave frequencies. Here we present a novel platform for microwave-to-optical conversion comprising a photonic crystal cavity made of single-crystal, piezoelectric gallium phosphide integrated on pre-fabricated niobium circuits on an intrinsic silicon substrate. The devices exploit spatially extended, sideband-resolved mechanical breathing modes at $\…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $χ^{(2)}$ and $χ^{(3)}$ coefficients, a high refractive index ($>3$), and transparency from visible to long-infrared wavelengths ($0.55-11\,μ$m)---its application as an integrated photonics material has been little studied. Here we introduce GaP-on-insulator as a platform for nonlinear photonics, exploiting a direct wafer bonding approach to realize integrated waveguides with 1.2 dB/cm loss in the telecommunications C-band (on par wi…
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons …
Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is the use of these devices as transducers between otherwise disparate quantum systems. In this regard, a promising approach is to build integrated piezoelectric optomechanical devices, that are then coupled to microwave circuits. Optical absorption, low quality factors and other challenges have up to now prevented operation in the quantum regime, however. Here…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits direct wafer bonding of a GaP/Al$_x$Ga$_{1-x}$P/GaP heterostructure onto a SiO$_2$-on-Si wafer followed by removal of the GaP substrate and the Al$_x$Ga$_{1-x}$P stop layer. Photonic devices such as grating couplers, waveguides, and ring resonators are patterned by inductively coupled-plasma reactive-ion etching in the top GaP device layer. The peak coupling ef…
Gallium phosphide on insulator for nanophotonics and quantum technologies
Friedrich Schiller University Jena（耶拿弗里德里希·席勒大学）；Max Planck School of Photonics（马克斯·普朗克光子学校）；Helmholtz-Institut Jena（耶拿亥姆霍兹研究所）；GSI Helmholtzzentrum für Schwerionenforschung（达姆施塔特重离子研究中心）；Laser Physics Centre, Research School of Physics, Australian National University（澳大利亚国立大学物理研究学院激光物理中心）
A two-dimensional model was developed to simulate the optoelectronic characteristics of indium-gallium-nitride (InGaN), thin-film, Schottky-barrier solar cells. The solar cells comprise a window, designed to reduce the reflection of incident light, Schottky-barrier and ohmic front electrodes, an n-doped InGaN wafer, and a metallic periodically corrugated back-reflector (PCBR). The ratio of indium to gallium in the wafer varies periodically throughout the thickness of the absorbing layer of the solar cell. Thus, the resulting InGaN wafer's optical and electrical properties are made to vary peri…
We demonstrate enhanced second harmonic generation in a gallium phosphide photonic crystal waveguide with a measured external conversion efficiency of 5$\times10^{-7}$/W. Our results are promising for frequency conversion of on-chip integrated emitters having broad spectra or large inhomogeneous broadening, as well as for frequency conversion of ultrashort pulses.
A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. T…
We have experimentally measured the distribution of the second-harmonic intensity that is generated inside a highly-scattering slab of porous gallium phosphide. Two complementary techniques for determining the distribution are used. First, the spatial distribution of second-harmonic light intensity at the side of a cleaved slab has been recorded. Second, the total second-harmonic radiation at each side of the slab has been measured for several samples at various wavelengths. By combining these measurements with a diffusion model for second-harmonic generation that incorporates extrapolated bou…
We present an integrated semiconductor-dielectric hybrid dual-frequency laser operating in the 1.5 $μ$m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a record-narrow intrinsic linewidth as low as about 2 kHz. This is realized by hybrid integration of a single diode amplifier based on indium phosphide (InP) with a long, low-loss silicon nitride (Si$_3$N$_4$) feedback circuit to extend the cavity photon lifetime, resulting in a cavity optical roundtrip length of about 30 cm on a chip. Simultaneous lasing at two freque…
