AI 中文总结
本研究采用离子切片工艺制备绝缘体上磷化镓衬底，经优化工艺获得高性能磷化镓薄膜，为纳米光子学与量子技术提供了新型材料平台。
AI 中文摘要
磷化镓因具有高折射率、低光吸收和强二阶非线性，成为可见光与近红外光子学及量子技术领域极具潜力的材料平台。本研究通过离子切片工艺制备了绝缘体上GaP衬底：通过控制He⁺离子注入能量和注量，可调控块状GaP的剥离深度与剥离行为，进而通过阳极键合和等离子体增强直接晶圆键合将GaP薄膜转移至非晶衬底。沟道卢瑟福背散射光谱与X射线衍射测试证实，转移后的薄膜仍保持单晶结构；经500℃退火及后续抛光处理，注入诱导的缺陷与光吸收显著降低，退火后薄膜的线性光学性能接近块状GaP。此外，(110)取向的GaP薄膜展现出与闪锌矿二阶非线性极化率张量相符的特征偏振依赖，表明其具有近乎原始的二阶非线性响应。该柔性制备方法可实现高质量单晶GaP的集成，其取向可调，适用于自由空间与集成纳米光子学，以及非线性与量子光学器件。
英文摘要
Gallium phosphide is a promising material platform for visible and near-infrared photonics and quantum technologies owing to its high refractive index, low optical absorption, and strong second-order nonlinearity. Here, we demonstrate the fabrication of GaP-on-insulator substrates by ion slicing. The splitting depth and exfoliation behavior of bulk GaP are tailored by controlling the He$^{+}$ ion implantation energy and fluence, enabling thin-film transfer onto amorphous substrates by anodic bonding and plasma-enhanced direct wafer bonding. Channeling Rutherford backscattering spectrometry and X-ray diffraction confirm that the transferred layers retain their single-crystalline structure, while implantation-induced disorder and optical absorption are substantially reduced by annealing at 500 °C and subsequent polishing. The annealed films exhibit linear optical properties approaching those of bulk GaP. In addition, a (110)-oriented GaP thin film shows the characteristic polarization dependence expected from the zinc-blende second-order nonlinear susceptibility tensor, demonstrating a near-pristine second-order nonlinear response. This flexible fabrication approach enables the integration of high-quality single-crystalline GaP with variable orientation for free-space and integrated nanophotonics as well as nonlinear and quantum optical devices.
Comments12 pages, 3 figures
