磷化镓/二氧化硅光子器件
Gallium phosphide-on-silicon dioxide photonic devices
摘要：
利用磷化镓的集成光子电路的开发需要用于制造绝缘体上GaP器件的稳健的、可扩展的工艺。在这里，我们提出了第一个GaP光子器件的SiO $_2$。该工艺利用将GaP/Al $_x$ Ga $_{1-x}$ P/GaP异质结构直接晶片键合到Si上$_2$晶片上，随后去除GaP衬底和Al $_x$ Ga $_{1-x}$ P停止层。光子器件如光栅耦合器、波导和环形谐振器通过感应耦合等离子体反应离子蚀刻在顶部GaP器件层中图案化。制作的光栅耦合器的峰值耦合效率高达4.8dB。光学品质因数为17000，以及二次和三次谐波产生观察与环形谐振器。由于GaP的大带隙在电信波长处提供低的双光子吸收，因此通过这项工作实现的绝缘体上GaP光子器件的高产率制造对于纳米光子学中的应用特别感兴趣，其中高品质因数或低模式体积可以产生高电场强度。大的带隙还使得能够实现在可见波长下操作的集成光子器件。
英文摘要：
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits direct wafer bonding of a GaP/Al$_x$Ga$_{1-x}$P/GaP heterostructure onto a SiO$_2$-on-Si wafer followed by removal of the GaP substrate and the Al$_x$Ga$_{1-x}$P stop layer. Photonic devices such as grating couplers, waveguides, and ring resonators are patterned by inductively coupled-plasma reactive-ion etching in the top GaP device layer. The peak coupling efficiency of the fabricated grating couplers is as high as 4.8 dB. Optical quality factors of 17000 as well as second- and third-harmonic generation are observed with the ring resonators. Because the large bandgap of GaP provides for low two-photon absorption at telecommunication wavelengths, the high-yield fabrication of GaP-on-insulator photonic devices enabled by this work is especially interesting for applications in nanophotonics, where high quality factors or low mode volumes can produce high electric field intensities. The large bandgap also enables integrated photonic devices operating at visible wavelengths.
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