One of the hallmarks of topological insulators is the correspondence between the value of its bulk topological invariant and the number of topologically protected edge modes observed in a finite-sized sample. This bulk-boundary correspondence has been well-tested for strong topological invariants, and forms the basis for all proposed technological applications of topology. Here, we report that a group of weak topological invariants, which depend only on the symmetries of the atomic lattice, also induces a particular type of bulk-boundary correspondence. It predicts the presence or absence of states localised at the interface between two inversion-symmetric band insulators with trivial values for their strong invariants, based on the space group representation of the bands on either side of the junction. We show that this corresponds with symmetry-based classifications of topological materials. The interface modes are protected by the combination of band topology and symmetry of the interface, and may be used for topological transport and signal manipulation in heterojunction-based devices.
Three dimensional topological insulator represents a class of novel quantum phases hosting robust gapless boundary excitations, which is protected by global symmetries such as time reversal, charge conservation and spin rotational symmetry. In this work we systematically study another class of topological phases of weakly interacting electrons protected by spatial inversion symmetry, which generally don't support stable gapless boundary states. We classify these inversion-symmetric topological insulators and superconductors in the framework of K-theory, and construct their lattice models. We a…
We show that a slab of a three-dimensional inversion-symmetric higher-order topological insulator (HOTI) in class A is a 2D Chern insulator, and that in class AII is a 2D $Z_2$ topological insulator. We prove it by considering a process of cutting the three-dimensional inversion-symmetric HOTI along a plane, and study the spectral flow in the cutting process. We show that the $Z_4$ indicators, which characterize three-dimensional inversion-symmetric HOTIs in classes A and AII, are directly related to the $Z_2$ indicators for the corresponding two-dimensional slabs with inversion symmetry, i.e.…
In commonly employed models for 2D topological insulators, bulk gapless states are well known to form at the band inversion points where the degeneracy of the states is protected by symmetries. It is thus sometimes quite tempting to consider this feature, the occurrence of gapless states, a result of the band inversion process under protection of the symmetries. Similarly, the band inversion process might even be perceived as necessary to induce 2D topological phase transitions. To clarify these misleading perspectives, we propose a simple model with a flexible Chern number to demonstrate that…
In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion into the PbTe matrix is investigated for the $p$-type Pb$_{1-x}$Sn$_x$Te series with $x$ = 0, 0.35, 0.60, and 1.00 via nuclear magnetic resonance (NMR) and transport measurements. $^{207}$Pb, $^{119}$Sn…
The precise determination of critical point is the basis to extract various critical properties of phase transitions. We identify that for two-dimensional inversion asymmetric insulators, with and without time-reversal symmetry, when topological phase transitions take place, all nonvanishing components of band-edge shift current tensor will reverse their signs in a singular way, regardless of what realistic value the temperature takes. This remarkable sign-reversal behavior of band-edge shift current tensor thus can be applied to determine the critical points of various topological phase trans…
We determine the optical response of ultrathin film topological insulators in the presence of a quantizing external magnetic field taking into account both hybridization between surface states, broken inversion symmetry and explicit time reversal symmetry breaking by the magnetic field. We find that breaking of inversion symmetry in the system, which can be due to interaction with a substrate or electrical gating, results in Landau level crossings which lead to additional optical transition channels that were previously forbidden. We show that by tuning the hybridization and symmetry breaking …
In this paper, we discuss the characteristic features of one-dimensional topological insulators with inversion symmetry but noncentered inversion axis in the unit cell, for any choice of the unit cell. In these systems, the global inversion operation generates a k-dependent inversion operator within the unit cell and this implies a nonquantized Zak's phase both for the trivial and nontrivial topological phases. By relating the Zak's phase with the eigenvalues of modified parity operators at the inversion invariant momenta, a corrected quantized form of the Zak's phase is derived. We show that …
We study a topological phase transition between a normal insulator and a quantum spin Hall insulator in two-dimensional (2D) systems with time-reversal and two-fold rotation symmetries. Contrary to the case of ordinary time-reversal invariant systems where a direct transition between two insulators is generally predicted, we find that the topological phase transition in systems with an additional two-fold rotation symmetry is mediated by an emergent stable two-dimensional Weyl semimetal phase between two insulators. Here the central role is played by the so-called space-time inversion symmetry…
Topological band insulators and (semi-) metals can arise out of atomic insulators when the hopping strength between electrons increases. Such topological phases are separated from the atomic insulator by a bulk gap closing. In this work, we show that in many (magnetic) space groups, the crystals with certain Wyckoff positions and orbitals being occupied must be semimetal or metals in the atomic limit, e.g. the hopping strength between electrons is infinite weak but not vanishing, which then are termed atomic (semi-)metals (ASMs). We derive a sufficient condition for realizing ASMs in spinless …
We study translationally-invariant insulators with inversion symmetry that fall outside the established classification of topological insulators. These insulators are not required to have gapless boundary modes in the energy spectrum. However, they do exhibit protected modes in the entanglement spectrum localized on the cut between two entangled regions. Their entanglement entropy cannot be made to vanish adiabatically, and hence the insulators can be called topological. There is a direct connection between the inversion eigenvalues of the band structure and the mid-gap states in the entanglem…
We study surface states of topological crystalline insulators and superconductors protected by inversion symmetry. These fall into the category of "higher-order" topological insulators and superconductors which possess surface states that propagate along one-dimensional curves (hinges) or are localized at some points (corners) on the surface. We show that the surface states of higher-order topological insulators and superconductors can be thought of as globally irremovable topological defects and provide a complete classification of these inversion-protected phases in any spatial dimension for…
We present a theory of the electron structure and the Zeeman effect for the helical edge states emerging in two-dimensional topological insulators based on HgTe/HgCdTe quantum wells with strong natural interface inversion asymmetry. The interface inversion asymmetry, reflecting the real atomistic structure of the quantum well, drastically modifies both bulk and edge states. For the in-plane magnetic field, this asymmetry leads to a strong anisotropy of the edge-state effective $g$-factor which becomes dependent on the edge orientation. The interface inversion asymmetry also couples the counter…
By breaking the inversion symmetry of the three-dimensional Dirac metal Na$_3$Bi, we realize topological insulator (TI) phases in the known compound NaBaBi using $ab~initio$ calculations. Two distinct TI phases emerge: one phase is due to band inversion between the Bi $p$ and Na $s$ bands, and the other phase (under pressure) is induced by inversion of the Bi $p$ and Ba $d$ bands. Both phases exhibit Dirac-cone-type surface states, but they have opposite spin textures. In the upper cone, a left-handed spin texture exists for the $s$-$p$ inverted phase (similar to a common TI, e.g., Bi$_2$Se$_3…
We discuss the change of the corner charge for noninteracting two dimensional insulators with inversion symmetry undergoing adiabatic evolution. We show that the change of the corner charge is accounted for by the adiabatic current flowing along the edges of the system. The study of systems with quasi-1D geometry is necessary to derive the analytical expression for the adiabatic current. This fact suggests that the change of the corner charge is neither a purely bulk nor edge effect, but rather a mixed one. The derived adiabatic current was examined and shows good agreement with the numerical …
We prove the existence of higher-order topological insulators in: {\it i}) fourfold rotoinversion invariant bulk crystals, and {\it ii}) inversion-symmetric systems with or without an additional three-fold rotation symmetry. These states of matter are characterized by a non-trivial $\mathbb{Z}_2$ topological invariant, which we define in terms of symmetric hybrid Wannier functions of the filled bands, and can be readily calculated from the knowledge of the crystalline symmetry labels of the bulk band structure. The topological invariant determines the generic presence or absence of protected c…
The effect of magnetic field on an ultrathin magnetic topological insulator film with structural inversion asymmetry is investigated. We introduce the phase diagram, calculate the Landau-level spectrum analytically and simulate the transport behavior in Landauer-Büttiker formalism. The quantum anomalous Hall phase will survive increasing magnetic field. Due to the two spin polarized zero modes of Landau levels a nontrivial phase similar with quantum spin Hall effect can be induced by magnetic field which is protected by structural inversion symmetry. Some exotic longitudinal and Hall resistanc…
The dipole trap model is able to explain the main properties of the apparent metal-to-insulator transition in gated high mobility Si-inversion layers. Our numerical calculations are compared with previous analytical ones and the assumptions of the model are discussed carefully. In general we find a similar behavior but include further details in the calculation. The calculated strong density dependence of the resistivity is not yet in full agreement with the experiment.
Symmetries play an essential role in identifying and characterizing topological states of matter. Here, we classify topologically two-dimensional (2D) insulators and semimetals with vanishing spin-orbit coupling using time-reversal ($\mathcal{T}$) and inversion ($\mathcal{I}$) symmetry. This allows us to link the presence of edge states in $\mathcal{I}$ and $\mathcal{T}$ symmetric 2D insulators, which are topologically trivial according to the Altland-Zirnbauer table, to a $\mathbb{Z}_2$ topological invariant. This invariant is directly related to the quantization of the Zak phase. It also pre…
The influence of bulk inversion asymmetry in [001] and [013] grown HgTe quantum wells is investigated theoretically. The bulk inversion asymmetry leads to an anti-crossing gap between two zero-mode Landau levels in a HgTe topological insulator, i.e., the quantum well with inverted band structure. It is found that this is the main contribution to the anti-crossing splitting observed in recent experimental magneto spectroscopic measurements. The relevant optical transitions involve different subbands, but the electron-electron interaction induced depolarization shift is found to be negligibly sm…
We propose a straightforward and effective approach for quantifying the band inversion induced by spin-orbit coupling in band insulators. In this approach we define a quantity as a function of wavevector in the Brillouin zone measuring the spillage between the occupied states of a system with and without SOC. Plots of the spillage throughout the BZ provide a ready indication of the number and location of band inversions driven by SOC. To illustrate the method, we apply this approach to the 2D Kane-Mele model, a 2D Bi bilayer with applied Zeeman field, and to first-principles calculations of so…
We consider a disordered topological insulator thin film placed on the top of a ferromagnetic insulator with a perpendicular exchange field $M$ and subjected to a perpendicular electric field. The presence of ferromagnetic insulator causes that bottom surface states of the topological insulator thin film become spin polarized and the electric field provides a potential difference $V$ between the two surface states, resulting in breaking of time-reversal and inversion symmetry in the system. Using Kubo formalism and employing the first Born approximation as well as the self-consistent Born appr…
Topological insulators are materials with a bulk excitation gap generated by the spin orbit interaction, and which are different from conventional insulators. This distinction is characterized by Z_2 topological invariants, which characterize the groundstate. In two dimensions there is a single Z_2 invariant which distinguishes the ordinary insulator from the quantum spin Hall phase. In three dimensions there are four Z_2 invariants, which distinguish the ordinary insulator from "weak" and "strong" topological insulators. These phases are characterized by the presence of gapless surface (or ed…
We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is ach…
Three-dimensional (3D) topological insulators (TIs) are new forms of quantum matter that are characterized by their insulating bulk state and exotic metallic surface state, which hosts helical Dirac fermions1-2. Very recently, BiTeCl, one of the polar semiconductors, has been discovered by angle-resolved photoemission spectroscopy to be the first strong inversion asymmetric topological insulator (SIATI). In contrast to the previously discovered 3D TIs with inversion symmetry, the SIATI are expected to exhibit novel topological phenomena, including crystalline-surface-dependent topological surf…
The electrostatic behavior of a prototypical three-dimensional topological insulator Bi$_2$Se$_3$(111) is investigated by a scanning tunneling microscopy (STM) study of the distribution of Rb atoms adsorbed on the surface. The positively charged ions are screened by both free electrons residing in the topological surface state as well as band bending induced quantum well states of the conduction band, leading to a surprisingly short screening length. Combining a theoretical description of the potential energy with STM-based atomic manipulation, we demonstrate the ability to create tailored ele…
Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional (2D) electron system in the vicinity of the metal-insulator transition occurs in all Si inversion layers. The size of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility samples. The behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy d…
Depositing Au on a graphene derivate, which involves substituting four C atoms with three N atoms in a $3\times 3$ cell graphene, we realized a topological insulator of the Kane-Mele model with a gap of 50~meV surrounding the Dirac point of graphene. In this material, we observed an anomalous band inversion (BI) protected by the symmetry with character $e$ of group C$_{\rm 3V}$. The symmetry constrains two $e$ bands with mirror-symmetry combination (MSC) and mirror-antisymmetry combination (MAC) of Au and N orbitals degenerate at $Γ$, whereas the interaction of $π^*$ of graphene on the $e$-MAC…
We study the phase diagram of a model quantum spin Hall system as a function of band inversion and band-coupling strength, demonstrating that when band hybridization is weak, an interaction-induced nematic insulator state emerges over a wide range of band inversion. This property is a consequence of the long-range Coulomb interaction, which favors interband phase coherence that is weakly dependent on momentum and therefore frustrated by the single-particle Hamiltonian at the band inversion point. For weak band hybridization, interactions convert the continuous gap closing topological phase tra…
We investigate the effect of a high frequency electromagnetic field with both of circularly and linearly polarization, on the emergence of quantum phases on thin topological insulators. Simultaneously, the influence of the system parameters (such as magnetic impurity, thickness engineering and structural inversion asymmetry of the potential) on emergence of topological phases is studied. We take our attention to the high frequency regime in which it is possible to consider an expansion for the Floquet Hamiltonian in terms of orders of 1/Ω. The topological invariants are determined and it is de…
Based on first-principles calculations and symmetry analysis, we predict atomically thin ($1-N$ layers) 2H group-VIB TMDs $MX_2$ ($M$ = Mo, W; $X$ = S, Se, Te) are large-gap higher-order topological crystalline insulators protected by $C_3$ rotation symmetry. We explicitly demonstrate the nontrivial topological indices and existence of the hallmark corner states with quantized fractional charge for these familiar TMDs with large bulk optical band gaps ($1.64-1.95$ eV for the monolayers), which would facilitate the experimental detection by STM. We find that the well-defined corner states exist…
We propose a two-dimensional non-Hermitian Chern insulator with inversion symmetry, which is anisotropic and has staggered gain and loss in both x and y directions. In this system, conventional bulk-boundary correspondence holds. The Chern number is a topological invariant that accurately predicts the topological phase transition and the existence of helical edge states in the topologically nontrivial gapped phase. In the gapless phase, the band touching points are isolated and protected by the symmetry. The degenerate points alter the system topology, and the exceptional points can destroy th…
We demonstrate via three examples that topological insulators (TI) offer a new platform for plasmonics. First, we show that the collective excitations of a thin slab of a TI display spin-charge separation. This gives rise to purely charge-like optical and purely spin-like acoustic plasmons, respectively. Second, we argue that the depletion layer mixes Dirac and Schrödinger electrons which can lead to novel features such as high modulation depths and interband plasmons. The analysis is based on an extension of the usual formula for optical plasmons that depends on the slab width and on the diel…
A band gap for electronic states in crystals governs various properties of solids, such as transport, optical and magnetic properties. Its estimation and control have been an important issue in solid state physics. The band gap can be controlled externally by various parameters, such as pressure, atomic compositions and external field. Sometimes, the gap even collapses by tuning some parameter. In the field of topological insulators, such closing of the gap at a time-reversal invariant momentum indicates a band inversion, i.e. it leads to a topological phase transition from a normal insulator …
We have performed angle-resolved photoemission spectroscopy (ARPES) of LaSb and CeSb, a candidate of topological insulator. Using soft-x-ray photons, we have accurately determined the three-dimensional bulk band structure and revealed that the band inversion at the Brillouin-zone corner - a prerequisite for realizing topological-insulator phase - is absent in both LaSb and CeSb. Moreover, unlike the ARPES data obtained with soft-x-ray photons, those with vacuum ultraviolet (VUV) photons were found to suffer significant $k_z$ broadening. These results suggest that LaSb and CeSb are topologicall…
We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles ban…
Magnetoelectric responses are a fundamental characteristic of materials that break time-reversal and inversion symmetries (notably multiferroics) and, remarkably, of "topological insulators" in which those symmetries are unbroken. Previous work has shown how to compute spin and lattice contributions to the magnetoelectric tensor. Here we solve the problem of orbital contributions by computing the frozen-lattice electronic polarization induced by a magnetic field. One part of this response (the "Chern-Simons term") can appear even in time-reversal-symmetric materials and has been previously sho…
Quantum spin Hall (QSH) insulator with large gap is highly desirable for potential spintronics application. Here we realize electrically tunable QSH insulator with large gap in van der Waals heterobilayer of monolayer transition metal dichalcogenide (TMD) and hexagonal BAs. When the type II band alignment gets inverted in an electric field, the hybridization by interlayer hopping between the spin-valley locked valence band edges in TMD and the BAs conduction band edges leads to a stacking-configuration dependent topological band inversion. In the non-interacting limit, the double spin degenera…
We investigate the shift current bulk photovoltaic response of materials close to a band inversion topological phase transition. We find that the bulk photocurrent reverses direction across the band inversion transition, and that its magnitude is enhanced in the vicinity of the phase transition. These results are demonstrated with first principles DFT calculations of BiTeI and CsPbI$_3$ under hydrostatic pressure, and explained with an analytical model, suggesting that this phenomenon remains robust across disparate material systems.
Higher-order topological insulators (HOTIs) are systems with topologically protected in-gap boundary states localized at their $(d-n)$-dimensional boundaries, with $d$ the system dimension and $n$ the order of the topology. This work proposes a rather universal dynamics-based characterization of one large class of $Z$-type HOTIs without specifically relying on any symmetry considerations. The key element of our innovative approach is to connect quantum quench dynamics with nested configurations of the so-called band inversion surfaces (BISs) of momentum-space Hamiltonians as a sum of operators…
We study a special class of topological phase transitions in two dimensions described by the inversion of bands with relative angular momentum higher than 1. A band inversion of this kind, which is protected by rotation symmetry, separates the trivial insulator from a Chern insulating phase with higher Chern number, and thus generalizes the quantum Hall transition described by a Dirac fermion. Higher angular momentum band inversions are of special interest, as the non-vanishing density of states at the transition can give rise to interesting many-body effects. Here we introduce a series of min…
The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena in MoS2, the underlying mechanism and detailed MIT process still remain largely unexplored. Here, we demonstrate that the vertical metal-insulator-semiconductor (MIS) heterostructures built from atomically thin MoS2 (monolayers and multilayers) are ideal capacitor structures for probing the electron states in MoS2. The vertical configuration of MIS heterost…
The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric systems independent of the gap size. 2D crystals with hexagonal and square Bravais lattice show similar effects, while true rectangular translational symmetry yields conductivity values much below the quantum $e^2/h$. Field-induced lifting the inversion symmetry does not influence the quantum spin Hall state up to band inversion but the conductivity quantization.…
Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved from a weak topological insulator (TI) phase in van der Waals materials Nb3XTe6 (X = Si, Ge). The fingerprints of weak TI homologically emerge with hourglass fermions, as multi nodal chains composed by the same pair of valence and conduction bands gapped by spin orbit coupling. The novel topological state, with a pair of valence and conduction bands encoding both weak TI and hourglass semimetal nature, is essential …
The axion insulator is a higher-order topological insulator protected by inversion symmetry. We show that under quenched disorder respecting inversion symmetry {\it on average}, the topology of the axion insulator stays robust, and an intermediate metallic phase in which states are delocalized is unavoidable at the transition from an axion insulator to a trivial insulator. We derive this conclusion from general arguments, from classical percolation theory, and from the numerical study of a 3D quantum network model simulating a disordered axion insulator through a layer construction. We find th…
We study the conditions for Bloch bands to be spanned by symmetric and strictly compact Wannier states that have zero overlap with all lattice sites beyond a certain range. Similar to the characterization of topological insulators in terms of an algebraic (rather than exponential) localization of Wannier states, we find that there may be impediments to the compact localization even of topologically "trivial" obstructed atomic insulators. These insulators admit exponentially-localized Wannier states centered at unoccupied orbitals of the crystalline lattice. First, we establish a sufficient con…
Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a non-zero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we pr…
We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT) for two samples studied. The periodicity of oscillations clearly demonstrates that the electron states remain fourfold degenerate down to and at the 2D MIT. Both the effective spin susceptibility χ* and mass m* remain finite and show no signatures of divergency at the critical density for both samples studied. To test possible divergency of χ*(n) and m*(n) …
The recently discovered three dimensional or bulk topological insulators are expected to exhibit exotic quantum phenomena. It is believed that a trivial insulator can be twisted into a topological state by modulating the spin-orbit interaction or the crystal lattice via odd number of band inversions, driving the system through a topological quantum phase transition. By directly measuring the topological invariants (for the method to directly measure Fu-Kane {$ν_0$}, see Hsieh \textit{et.al.,} Science 323, 919 (2009) at http://www.sciencemag.org/content/323/5916/919.abstract) we report the obse…
It is known that three-dimensional magnetic systems with glide symmetry can be characterized by a $Z_2$ topological invariant together with the Chern number associated with the normal vector of the glide plane, and they are expressed in terms of integrals of the Berry curvature. In the present paper, we study the fate of this topological invariant when inversion symmetry is added while time-reversal symmetry is not enforced. There are two ways to add inversion symmetry, leading to space groups No.~13 and No.~14. In space group No.~13, we find that the glide-$Z_2$ invariant is expressed solely …
We theoretically study subgap states appearing at the interface between two three-dimensional topological insulators which have different configurations in the spin-orbit interactions from each other. The coupling of spin $\boldsymbolσ$ with momenta $\boldsymbol{p}$ is configured by a material dependent $3\times 3$ matrix $\boldsymbolΛ$ as $σ^μΛ_μ^νp_ν$. We show that the spectra of the interface suggap states depend strongly on the relative choices of $\boldsymbolΛ$ in the two topological insulators. In particular, we focus on properties of gapless states which appear when $\boldsymbolΛ$ in tw…
We investigate a new class of topological antiferromagnetic (AF) Chern insulators driven by electronic interactions in two-dimensional systems without inversion symmetry. Despite the absence of a net magnetization, AF Chern insulators (AFCI) possess a nonzero Chern number $C$ and exhibit the quantum anomalous Hall effect (QAHE). Their existence is guaranteed by the bifurcation of the boundary line of Weyl points between a quantum spin Hall insulator and a topologically trivial phase with the emergence of AF long-range order. As a concrete example, we study the phase structure of the honeycomb …
A two-dimensional topological crystalline insulator (TCI) with a single unit cell (u.c.) thickness is demonstrated here. To that end, one first shows that tetragonal ($C_4$ in-plane) symmetry is not a necessary condition for the creation of zero-energy metallic surface states on TCI slabs of finite-thicknesses, because zero-energy states persist even as all the in-plane rotational symmetries--furnishing topological protection--are completely removed. In other words, zero-energy levels on the model are not due to (nor are they protected by) topology. Furthermore, effective twofold energy degene…
