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arXiv 1806.04023cond-mat.mes-hall
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由反转和旋转反转对称性保护的高阶拓扑绝缘体

Higher-order topological insulators protected by inversion and rotoinversion symmetries

Guido van Miert, Carmine Ortix

摘要:

我们证明了高阶拓扑绝缘体的存在性:{ \it i})四重旋转反转不变的大块晶体,和{ \it ii})反转对称系统,或没有额外的三重旋转对称。这些状态的物质的特征在于由一个非平凡的$\mathbb{Z}_2$拓扑不变,我们定义的填充带的对称混合Wannier函数的条款,并可以很容易地计算出从知识的晶体对称标签的散装能带结构。拓扑不变量决定了受保护的手征无间隙一维模式的存在或不存在,这些模式局限于常规有间隙表面之间的铰链处。

英文摘要:

We prove the existence of higher-order topological insulators in: {\it i}) fourfold rotoinversion invariant bulk crystals, and {\it ii}) inversion-symmetric systems with or without an additional three-fold rotation symmetry. These states of matter are characterized by a non-trivial $\mathbb{Z}_2$ topological invariant, which we define in terms of symmetric hybrid Wannier functions of the filled bands, and can be readily calculated from the knowledge of the crystalline symmetry labels of the bulk band structure. The topological invariant determines the generic presence or absence of protected chiral gapless one-dimensional modes localized at the hinges between conventional gapped surfaces.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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