Increasing demands for renewable sources of energy has been a major driving force for developing efficient thermoelectric materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDC) have emerged as promising candidates for thermoelectric applications due to their large effective mass and low thermal conductivity. In this article, we study the thermoelectric performance of lateral TMDC heterostructures within a multiscale quantum transport framework. Both $n$-type and $p$-type lateral heterostructures are considered for all possible combinations of semiconducting TMDCs: MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$. The band alignment between these materials is found to play a crucial in enhancing the thermoelectric figure-of-merit ($ZT$) and power factor far beyond those of pristine TMDCs. In particular, we show that the room-temperature $ZT$ value of $n$-type WS$_2$ with WSe$_2$ triangular inclusions, is five times larger than the pristine WS$_2$ monolayer. $p$-type MoSe$_2$ with WSe$_2$ inclusions is also shown to have a room-temperature $ZT$ value about two times larger than the pristine MoSe$_2$ monolayer. The peak power factor values calculated here, are the highest reported amongst gapped 2D monolayers at room temperature. Hence, 2D lateral TMDC heterostructures open new avenues to develop ultra-efficient, planar thermoelectric devices.
Two-dimensional group IV transition-metal dichalcogenides have encouraging thermoelectric applications since their electronic and lattice properties can be manipulated with strain. In this paper, we report the thermoelectric parameters such as electrical conductivity, Seebeck coefficients, electrical relaxation times, and the mode dependent contributions to the lattice thermal conductivity of ZrX$_2$ (X = S, Se, Te) from first principles methods. Our calculations indicate that due to tensile strain, the powerfactor increases while simultaneously decreasing the lattice thermal conductivity thus…
Thermoelectric power generation has been recognized as one of the most important technologies, and high-performance thermoelectric materials have long been pursued. However, because of the large number of candidate materials, this quest is extremely challenging, and it has become clear that a firm theoretical concept from the viewpoint of band-structure engineering is needed. In this study, we theoretically demonstrate that pnictogen-dichalcogenide layered compounds, which originally attracted attention as a family of superconductors and have recently been investigated as thermoelectric materi…
Molecular dynamics simulations are performed to investigate the misfit strain-induced buckling of the transition-metal dichalcogenide (TMD) lateral heterostructures, denoted by the seamless epitaxial growth of different TMDs along the in-plane direction. The Stillinger-Weber potential is utilized to describe both the interaction for each TMD and the coupling between different TMDs, i.e., MX2 (with M=Mo, W and X=S, Se, Te). It is found that the misfit strain can induce strong buckling of the free-standing TMD lateral heterostructures of large area, resulting from the TMDs' atomic-thick nature. …
Transition metal dichalcogenide (TMD) monolayers attract great attention due to their specific structural, electronic and mechanical properties. The formation of their lateral heterostructures allows a new degree of flexibility in engineering electronic and optoelectronic devices. However, the mechanical properties of the lateral heterostructures are rarely investigated. In this study, a comparative investigation on the mechanical characteristics of 1H, 1T' and 1H/1T' heterostructure phases of different TMD monolayers including molybdenum disulfide (MoS2) molybdenum diselenide (MoSe2), Tungste…
The experimental studies about monolayer transition metal dichalcogenides in the recent year reveal this kind of compounds have many metastable phases with unique physical properties, not just 1H phases. Here, we focus on the 1T'' phase and systematically investigate the electronic structures and transport properties of MX2 (M=Mo, W; X=S, Se, Te) using the first-principles calculations with Boltzmann transport theory. And among them, only three molybdenum compounds has small direct bandgap at K point, which derive from the distortion of octahedral-coordination [MoS6]. For these three cases, ho…
Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower susceptibility to environmental conditions. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-WSe2, where the hetero-junctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layer. With respect to their monolayer counterparts, bilay…
Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions using the same materials with different thicknesses. Using scanning tunneling microscopy and spectroscopy, here we show the real space image of electronic structures across the bilayer-monolayer interface in MoSe2 and WSe2. Most bilayer-monolayer hetero…
The electronic and thermoelectric properties of one to four monolayers of MoS$_{2}$, MoSe$_{2}$, WS$_{2}$, and WSe$_{2}$ are calculated. For few layer thicknesses,the near degeneracies of the conduction band $K$ and $Σ$ valleys and the valence band $Γ$ and $K$ valleys enhance the n-type and p-type thermoelectric performance. The interlayer hybridization and energy level splitting determine how the number of modes within $k_BT$ of a valley minimum changes with layer thickness. In all cases, the maximum ZT coincides with the greatest near-degeneracy within $k_BT$ of the band edge that results in…
The thermoelectric properties of the three pyrite-type IIB-VIA2 dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated and compared with those of the prototype ZnSe2 in order to optimize their thermoelectric properties. Using the phonon Boltzmann transport equation, we find that they all have ultralow lattice thermal conductivities. By analyzing their vibrational properties, these are attributed to soft phonon modes derived from the loosely bound rattling-like metal atoms and to strong anharmonicities caused by the vibrations of all atoms perpendicular to the strongly bound non…
We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2 based on the experimentally prepared WS2/WSe2 lateral superlattice (LS) crystal. On the basis of density function theory combined with Boltzmann transport equation, we show that the TE figure of merit zT of monolayer WS2 is remarkably enhanced when forming into a WS2/WSe2 LS crystal. This is primarily ascribed to the almost halved lattice thermal conductivity due to the enhanced anharmonic processes. Electronic transport properties parallel (xx…
Two-dimensional (2D) lateral heterojunctions of transition metal dichalcogenides (TMDCs) have become a reality in recent years. Semiconducting TMDC layers in their common H -structure have a nonzero in-plane electric polarization, which is a topological invariant. We show by means of first-principles calculations that lateral 2D heterojunctions between TMDCs with a different polarization generate one-dimensional (1D) metallic states at the junction, even in cases where the different materials are joined epitaxially. The metallicity does not depend upon structural details, and is explained from…
We present a study on the modification of the electronic structure and hole-doping effect for the layered dichalcogenide WSe_2 with a multi-valley band structure, where Ta is doped on the W site along with a partial substitution of Te for its lighter counterpart Se. By means of band-structure calculations and specific-heat measurements, the introduction of Te is theoretically and experimentally found to change the electronic states in WSe_2. While in WSe_2 the valence-band maximum is located at the Gamma point, the introduction of Te raises the bands at the K point with respect to the Gamma po…
The electronic structures and thermoelectric properties of semiconducting transition-metal dichalcogenide monolayers $\mathrm{MX_2}$ (M=Zr, Hf, Mo, W and Pt; X=S, Se and Te) are investigated by combining first-principles and Boltzmann transport theory, including spin-orbital coupling (SOC). It is found that the gap decrease increases from S to Te in each cation group, when the SOC is opened. The spin-orbital splitting has the same trend with gap reducing. Calculated results show that SOC has noteworthy detrimental effect on p-type power factor, while has a negligible influence in n-type doping…
Interest in the application of thermoelectric devices for renewable energy has risen over the past decade. In this paper, we calculate the transport properties of various configurations of the transition metal dichalcogenide (TMD) MSe$_2$ (M = Hf, Zr, Ti) in search of promising thermoelectric materials at low/high temperatures. We explore the properties of the pure monolayer at discrete levels of biaxial tensile strain (epsilon = 0%, 2%, 4%, 8%), as well as those of the van der Waals heterobilayers MSe$_2$/MSe$_2$ using first-principles calculations combined with semi-classical Boltzmann trans…
We systematically study the effect of high pressure on the structure, electronic structure and transport properties of 2H-MoS$_2$, based on first-principles density functional calculations and the Boltzmann transport theory. Our calculation shows a vanishing anisotropy in the rate of structural change at around 25 GPa, in agreement with the experimental data. A conversion from van der Waals(vdW) to covalent-like bonding is seen. Concurrently, a transition from semiconductor to metal occurs at 25 GPa from band structure calculation. Our transport calculations also find pressure-enhanced electri…
The search for thermoelectrics with higher figures of merit (ZT) will never stop due to the demand of heat harvesting. Single layer transition metal dichalcogenides (TMD), namely MX2 (where M is a transition metal and X is a chalcogen) that have electronic band gaps are among the new materials that have been the focus of such research. Here, we investigate the thermoelectric transport properties of hybrid armchair-edged TMDs nanoribbons, by using the nonequilibrium Green's function technique combined with the first principles and molecular dynamics methods. We find a ZT as high as 7.4 in hybri…
Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides have been connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth…
We study the thermoelectric properties of bulk $MoSe_2$ within relaxation time approximation including electron-phonon and ionized impurity interactions using first-principles calculations at room temperatures. The anisotropy of this two-dimensional layered metal dichalcogenide is studied by calculations of electron mobility in the cross-plane and the in-plane directions. We show that the cross-plane mobility is two orders of magnitude smaller than the in-plane one. The inclusion of van der Waals interactions further lowers the carrier mobility in the cross-plane direction but minimally affect…
Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric properties (both electron and phonon parts) of monolayer $\mathrm{PtSe_2}$ with generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) for electron part and GGA for phonon part. Calculated results show that compressive or tensile strain can induce conduction band minimum (CBM) or valence band maximum (VBM) transition, which produces important…
We report a first-principle theoretical study of a monolayer-thick lateral heterostructure (LH) joining two different transition metal dichalcogenides (TMDC): NbS2 and WSe2. The NbS2//WSe2 LH can be considered a prototypical example of a conducting(NbS2)/semiconducting(WSe2) two-dimensional (2D) hybrid heterojunction. We first generate and validate realistic atomistic models of the NbS2//WSe2 LH, derive their band structure and subject it to a fragment decomposition and electrostatic potential analysis to extract a simple but quantitative model of this interfacial system. Stoichiometric fluctu…
A high power factor and low lattice thermal conductivity are two essential ingredients of highly efficient thermoelectric materials. Although monolayers of transition metal dichalcogenides possess high power factors, high lattice thermal conductivities significantly impede their practical applications. Our first-principles calculations show that these two ingredients are well fulfilled in the recently synthesized Pd$_{2}$Se$_{3}$ monolayer, whose crystal structure is composed of [Se$_{2}$]$^{2-}$ dimers, Se$^{2-}$ anions, and Pd$^{2+}$ cations coordinated in a square planar manner. Our detaile…
Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. Here we demonstrate how grain boundaries, crystal orientation, and strain fields can unambiguously be identified with combined lateral force microscopy (LFM) and transverse shear microscopy (TSM) for CVD-grown tungsten disulfide (WS2) monolayers, on length scales that are relevant for optoelectroni…
Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested power density of 7W/cm2 at deltaT=30K is modeled based on a thin-film lateral architecture of thermo-converter that takes advantage of confinement effects to reduce the thermal conductivity. The simulation leads to the conclusion that 10nm thick Silicon has 10 times higher efficiency than bulk.
Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct growth. In conventional semiconductor heterostructures, the design of multi-junctions is critical to achieve carrier confinement. Analogously, we report successful synthesis of monolayer WS2/WS2(1-x)Se2x…
Lots of two-dimensional (2D) materials have been predicted theoretically, and further confirmed in experiment, which have wide applications in nanoscale electronic, optoelectronic and thermoelectric devices. Here, the thermoelectric properties of ATeI (A=Sb and Bi) monolayers are systematically investigated, based on semiclassical Boltzmann transport theory. It is found that spin-orbit coupling (SOC) has important effects on electronic transport coefficients in p-type doping, but neglectful influences on n-type ones. The room-temperature sheet thermal conductance is 14.2 $\mathrm{W K^{-1}}$ fo…
Two-dimensional transition metal dichalcogenides show great potential as promising thermoelectric materials due to their lower dimensionality, the unique density of states and quantum confinement of carriers. The effect of mechanical strain on the thermoelectric performances of monolayer WS 2 has been investigated using density functional theory associated with semiclassical Boltzmann transport theory. The variation of Seebeck coefficient and band gap with applied strain has followed the same type of trend. For n-type material the relaxation time scaled power factor(S 2 σ/τ) increases by the a…
Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order to understand the structural dynamics at play, especially at interfaces and defects, in the prototypical film of monolayer MoS2 under electrical bias. Through our sample fabrication process, we clearl…
While new species and properties of two-dimensional (2D) materials are being reported with extraordinary regularity, a significant bottleneck in the field is the ability to controllably process material into working devices. We report a chemical vapor deposition process to selectively grow 2D material in a deterministic manner around lithographically defined bulk metallic patterns which concurrently provide as-grown contacts to the material. Monolayer films, with lateral extent of up to hundreds of microns are controllably grown on and around patterned regions of transition metals. By using di…
The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces towards renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity, while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric powerfactor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to high powerfactor due to the unique density of states (DOS) of confined electron…
In analogy to transition-metal dichalcogenide (TMD) monolayers, which have wide applications in photoelectricity, piezoelectricity and thermoelectricity, Janus MoSSe monolayer has been successfully synthesized by substituting the top Se atomic layer in $\mathrm{MoSe_2}$ by S atoms. In this work, Janus monolayer ZrSSe is proposed by ab initio calculations. For the electron part, the generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) is used as exchange-correlation potential, while GGA for lattice part. Calculated results show that the ZrSSe monolayer is dynamically and mech…
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WS…
Near-field optical microscopy can be used as a viable route to understand the nanoscale material properties below the diffraction limit. On the other hand, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are the materials of recent interest to study the spatial confinement of charge carriers, photon, and phonons. Heterostructures based on Mo or W based monolayer TMDs form type-II band alignment, and hence the optically excited carriers can be easily separated for applications pertaining to photonics and electronics. Mapping these spatially confined carriers or phot…
The twist angle in transition metal dichalcogenide (TMD) heterobilayers is a compelling degree of freedom that determines electron correlations and the period of lateral confinement of moiré excitons. Here we perform polarization-resolved second harmonic generation (SHG) spectroscopy of MoS2/WSe2 heterostructures. We demonstrate that by choosing suitable laser energies the twist angle between two monolayers can be measured directly on the assembled heterostructure. We show that the amplitude and polarization of the SHG signal from the heterostructure are determined by the twist angle between t…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Her…
The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The lateral VS2|MoS2 heterojunction diodes show a perfect rectifying effect and are promising for the applications of Schottky diodes. A large spin-polarization ratio is observed for the A-type device and pure spin-mediated current is then realized. The gate voltage significantly tunes the current and rectification ratio of their field-effect transistors (FETs). I…
Fabricating van der Waals (vdW) bilayer heterostructures (BL-HS) by stacking the same or different two-dimensional (2D) layers, offers a unique physical system with rich electronic and optical properties. Twist-angle between component layers has emerged as a remarkable parameter that can control the period of lateral confinement, and nature of the exciton (Coulomb bound electron-hole pair) in reciprocal space thus creating exotic physical states including moiré excitons. In this review article, we focus on opto-electronic properties of excitons in transition metal dichalcogenide (TMD) semicond…
This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and perform the study with both a k.p based analytic method and a recursive Green's function based numerical method. The study yields the transmission coefficient as a function of incident energy and transverse wave vector, for holes going through lateral quantum barriers oriented in either armchair or zigzag directions, in both homogeneous and heterogeneous system…
Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides (TMDCs) have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we demonstrate a refined version of the optothermal Raman technique to measure the thermal transport properties of two TMDC materials, MoS2 and MoSe2, in single-layer (1L) and bi-layer (2L) forms. This new version incorporates two crucial improvements over previous implementations. First, we utilize more direct measurements of the optical absorption of the suspended samples unde…
Lateral heterostructures of two-dimensional (2D) materials, integrating different phases or materials into a single piece of nanosheet, have attracted intensive research interests in the past few years for high-performance electronic and optoelectronic devices. It also holds promises to significantly improve the performance and enable new functions of spintronic devices. It is imperative to have a 2D material possessing diverse electronic and magnetic properties that are required in spintronics. In this work, using density functional theory calculations, we surveyed all IV, V and VI group tran…
Monolayer transition metal dichalcogenides in the distorted octahedral 1T$^\prime$ phase exhibit a large bulk bandgap and gapless boundary states, which is an asset in the ongoing quest for topological electronics. In single-layer tungsten diselenide (WSe$_2$), the boundary states have been observed at well ordered interfaces between 1T$^\prime$ and semiconducting (1H) phases. This paper proposes an effective 4-band theory for the boundary states in single-layer WSe$_2$,describing a Kramers pair of in-gap states as well as the behaviour at the spectrum termination points on the conduction and …
Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, we report tunable transport behavior which was introduced into single layer tungsten diselenide and tungsten disulfide by focused He$^+$ irradiation. Pseudo-metallic behavior was induced by irradiating the materials with a dose of ~1x10$^{16} He^+/cm^2$ to introduce defect states, and subseq…
In this work, we are developing the theoretical prototype and improving the technique for installing the Thermoelectric Generator (TEG) set up in automobiles. We have considered a linear curve fit from a zigzag curve of reported mass flow rate and temperature variation at the hot gas inlet. Accordingly, the temperature of the coolant is also varied linearly at the inlet from 300 K to 320 K and corresponding the mass flow rate of coolant. Circular fin is installed around each circular layer of Thermoelectric Materials (TEM) after the water jacket. The heat loss through each fin is calculated as…
Two-dimensional monolayer transition metal dichalcogenides (TMDs) have unique optical and electronic properties for applications pertaining to field effect transistors, light emitting diodes, photodetectors, and solar cells. Vertical interfacing of WS2 and MoS2 layered materials in combination with other families of 2D materials were previously reported. On the other hand, lateral heterostructures are particularly promising for the spatial confinement of charged carriers, excitons and phonons within an atomically-thin layer. In the lateral geometry, the quality of the interface in terms of the…
One of the most fundamental devices for electronics and optoelectronics is the PN junction, which provides the functional element of diodes, bipolar transistors, photodetectors, LEDs, and solar cells, among many other devices. In conventional PN junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Materials with ambipolar conductance, however, allow for PN junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here we report ambipolar monolayer WSe2 devices in …
Atomically thin transition metal dichalcogenides (TMDs) have distinct opto-electronic properties including enhanced luminescence and high on-off current ratios, which can be further modulated by making more complex TMD heterostructures. However, resolution limits of conventional optical methods do not allow for direct optical-structural correlation measurements in these materials, particularly of buried interfaces in TMD heterostructures. Here we use, for the first time, electron beam induced cathodoluminescence in a scanning transmission electron microscope (CL-STEM) to measure optical proper…
Since the discovery of graphene, a tremendous amount of two dimensional (2D) materials have surfaced. Their electronic properties can usually be well understood without considering correlations between electrons. On the other hand, strong electronic correlations are known to give rise to a variety of exotic properties and new quantum phases, for instance, high temperature superconductivity, heavy fermions and quantum spin liquids. The study of these phenomena has been one of the main focuses of condensed matter physics. There is a strong incentive to introduce electronic correlations into 2D m…
The growth and microstructural properties of ternary monolayers of two-dimensional hexagonal materials are examined, including both individual two-dimensional crystalline grains and in-plane heterostructures, multijunctions, or superlattices. The study is conducted through the development of a ternary phase field crystal model incorporating sublattice ordering and the coupling among the three atomic components. The results demonstrate that a transition of compositional pattern or modulation in this type of two-dimensional ternary crystals, from phase separation to geometrically frustrated latt…
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrie…
CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to be effectively used for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date characterisation has been limited to sub 0.1 …
