绝缘体上MoS2半导体的横向电沉积
Lateral electrodeposition of MoS2 semiconductor over an insulator
摘要：
开发用于沉积过渡金属二硫属化物的新技术对于在光电子学中工业采用2D材料至关重要。在这项工作中，二硫化钼（MoS2）的绝缘表面上的横向生长证明使用电化学沉积。通过制造一种新型的微电极，MoS2二维薄膜生长的TiN电极横跨相对侧已连接在绝缘衬底上，因此，形成一个横向器件结构，通过只有一个光刻和沉积步骤。使用各种表征技术，二硫化钼的生长速率已被证明是高度各向异性的横向垂直生长比超过20倍。对器件结构的电子和光响应测量表明，电沉积的MoS2层表现得像半导体，证实了它们在光电探测应用中的潜力。这种横向生长技术为室温、可扩展和位点选择性地生产各种过渡金属二硫属化物及其横向异质结构铺平了道路，用于基于2D材料的制造设备。
英文摘要：
Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides have been connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS2 has been shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20-fold. Electronic and photo-response measurements on the device structures demonstrate that the electrodeposited MoS2 layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way towards room temperature, scalable and site-selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials-based fabricated devices.
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