磁耦合和密度对STT-MRAM性能的影响
Impact of Magnetic Coupling and Density on STT-MRAM Performance
摘要：
磁耦合作为MRAM的一种独特机制，在设计存储器阵列时需要考虑。本文模型分析了STT-MRAM的单元内和单元间磁耦合，并研究了它们对MTJ器件的写入性能和保持力的影响，MTJ器件是STT-MRAM的数据存储元件。我们给出了直径从35 nm到175 nm的MTJ器件的磁性测量数据，我们使用这些数据来校准我们的胞内磁耦合模型。随后，我们将此模型外推到存储器阵列中的单元间磁耦合研究。我们提出了胞间磁耦合因子Psi来表示耦合强度。我们的模拟结果表明，在磁耦合对器件性能的影响可以忽略不计的约束下，Psi = 2%可以最大化阵列密度。更高的阵列密度显示出平均开关时间的显著变化，特别是在低开关电压下，这是由单元间磁耦合引起的，并且取决于单元附近的数据模式。我们还观察到一个边际退化的数据保留时间的影响下，细胞间的磁耦合。
英文摘要：
As a unique mechanism for MRAMs, magnetic coupling needs to be accounted for when designing memory arrays. This paper models both intra- and inter-cell magnetic coupling analytically for STT-MRAMs and investigates their impact on the write performance and retention of MTJ devices, which are the data-storing elements of STT-MRAMs. We present magnetic measurement data of MTJ devices with diameters ranging from 35nm to 175nm, which we use to calibrate our intra-cell magnetic coupling model. Subsequently, we extrapolate this model to study inter-cell magnetic coupling in memory arrays. We propose the inter-cell magnetic coupling factor Psi to indicate coupling strength. Our simulation results show that Psi=2% maximizes the array density under the constraint that the magnetic coupling has negligible impact on the device's performance. Higher array densities show significant variations in average switching time, especially at low switching voltages, caused by inter-cell magnetic coupling, and dependent on the data pattern in the cell's neighborhood. We also observe a marginal degradation of the data retention time under the influence of inter-cell magnetic coupling.
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