arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2005.00923cs.ETcs.LG
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Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation

University of Central Florida(中佛罗里达大学);Purdue University(普渡大学);University of South Carolina(南卡罗来纳大学)

Hossein Pourmeidani, Punyashloka Debashis, Zhihong Chen, Ronald F. DeMara, Ramtin Zand

英文摘要:

Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal structures in Deep Belief Networks (DBNs), the impact of reducing the Magnetic Tunnel Junction's (MTJ's) energy barrier is assessed and optimized for the resulting stochasticity present in the learning system. This can mitigate the process variation sensitivity of stochastic DBNs which encounter a sharp drop-off when energy barriers exceed near-zero kT. As evaluated for the MNIST dataset for energy barriers at near-zero kT to 2.0 kT in increments of 0.5 kT, it is shown that the stability factor changes by 5 orders of magnitude. The self-compensating circuit developed herein provides a compact, and low complexity approach to mitigating process variation impacts towards practical implementation and fabrication.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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