We present a detailed study of the electrical transport properties of YBa2Cu3O7-δ thin film. The irreversibility fields (μ_0 H_irr), upper critical fields (μ_0 H_C2), penetration depths (λ) and coherence lengths (ξ ) of the YBa2Cu3O7-δ materials are deduced from the resistivity curves. Itis observed that μ_0 H_irr, μ_0 H_C2 and ΔTc of the film strongly depend on the direction and strength of the field. The coherence length ξ (0) and penetration depth λ (0) values at T = 0 K has been calculated from the irreversibility fields (μ_0 H_irr) and upper critical fields (μ_0 H_C2) respectively. Based on all the results, the change of the superconducting properties as a function of the magnetic field direction presents the anisotropy of the sample produced.
We report the results of studying the influence of the uranium-ion irradiation of the Bi_2Sr_2CaCu_2O_8 thin films on the high-temperature part (close to critical temperature) of their irreversibility line. We studied irreversible properties of the films by measuring the hysteresis of nonresonant microwave absorption. The results have revealed the shift of irreversibility line towards low temperatures and magnetic fields. The effect is most significant for the films irradiated with large doses, more than 1T. This fact is in good agreement with the theoretical prediction by Koshelev and Vinokur…
We report on measurements of the angular dependence of the irreversibility temperature $T_{irr}(θ) $ in $YBa_2Cu_3O_{7-δ}$ thin films, defined by the onset of a third harmonic signal and measured by a miniature Hall probe. From the functional form of $T_{irr}(θ)$ we conclude that the origin of the irreversibility line in unirradiated films is a dynamic crossover from an unpinned to a pinned vortex liquid. In irradiated films the irreversibility temperature is determined by the trapping angle.
AC magnetic susceptibilities of electron-doped Pr_{1.85}Ce_{0.15}CuO_4 (PCCO) and Sm_{1.85}Ce_{0.15}CuO_4 (SCCO) granular thin films have been measured as a function of temperature and magnetic-field strength. Depending on the level of homogeneity of our films, two different types of the irreversibility line (IL) defined as the intergrain-loss peak temperature in the imaginary part of susceptibility have been found. The obtained results are described via the critical-state model taking into account the low-field grain-boundary pinning. The extracted pinning-force densities in more granular SCC…
The magnetic characteristics for superconducting samples of different geometries (plates and films of various widths) and orientation with respect to external field are compared. A similarity is established between the magnetization curves M(H) and the corresponding susceptibilities. A sign reversal is predicted for the 3rd harmonic of the ac susceptibillity when the irreversibility mechanism changes from bulk pinning to edge barrier. A mutual influence of the edge barrier and bulk pinning on the magnetization curves and field-dependent ac susceptibility is studied on the basis of an exactly s…
Critical current measurements were made on thin films of YBa2Cu3O7-delta and Y0.8Ca0.2Ba2Cu3O7-delta produced by sol-gel and pulsed laser deposition, respectively. Both samples have high critical currents at low temperatures and the critical current, Jc, is largest in the overdoped Y0.8Ca0.2Ba2Cu3O7-delta thin film. Annealing studies show a large increase in Jc with increasing hole concentration and suggests that the maximum Jc should occur for overdoped samples. The very overdoped region of the superconducting phase diagram was probed by studying bulk ceramic Y0.8Ca0.2Ba2Cu3O7-delta samples, …
The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of Nb_3Sn and four times that of Nb-Ti alloy, MgB_2 has the potential to reach much higher fields and current densities than either of these technological superconductors. A vital prerequisite, strongly linked current flow, has already been demonstrated even at this early stage. One possible drawback is the observation that the field at which superconductivity i…
MgB2 thin films were cold-grown on sapphire substrates by pulsed laser deposition (PLD), followed by post-annealing in mixed, reducing gas, Mg-rich, Zr gettered, environments. The films had Tcs in the range 29 K to 34 K, Jcs (20K, H=0) in the range 30 kA/cm2 to 300 kA/cm2, and irreversibility fields at 20 K of 4 T to 6.2 T. An inverse correlation was found between Tc and irreversibility field. The films had grain sizes of 0.1-1 micron and a strong biaxial alignment was observed in the 950C annealed film.
Magneto-resistivity of a c-axis oriented MgB$_{2}$ thin film was studied in perpendicular and parallel magnetic fields up to $\sim $23 T with temperatures down to 0.38 K. Resistive critical magnetic fields were determined. Large separations between irreversibility lines and upper critical magnetic fields are observed. An effective quantum parameter as a function of temperature is proposed to explain the separations under the theoretical framework of quantum fluctuations, in good agreement with our experimental and previously published experimental data.
The relationship between irreversibility field, Hirr, and crystallinity of MgB2 bulks including carbon substituted samples was studied. The Hirr was found to increase with an increase of FWHM of MgB2 (110) peak, which corresponds to distortion of honeycomb boron sheet, and their universal correlation was discovered even including carbon substituted samples. Excellent Jc characteristics under high magnetic fields were observed in samples with large FWHM of (110) due to the enhanced intraband scattering and strengthened grain boundary flux pinning. The relationship between crystallinity and Hirr…
We have studied the temperature dependence of the in-plane resistivity of NbN/AlN multilayer samples with varying insulating layer thickness in magnetic fields up to 7 Tesla parallel and perpendicular to the films. The upper critical field shows a crossover from 2D to 3D behavior in parallel fields. The irreversibility lines have the form (1-T/Tc)^alpha, where alpha varies from 4/3 to 2 with increasing anisotropy. The results are consistent with simultaneous melting and decoupling transitions for low anisotropy sample, and with melting of decoupled pancakes in the superconducting layers for hi…
The anisotropic irreversibility field B$_{Irr}$ of two $YBa_2Cu_3O_{7-x}$ thin films doped with additional rare earth (RE)=(Gd,Y) and Zr and containing strong correlated pins (splayed BaZrO$_{3}$ nanorods, and $RE_2O_3$ nanoprecipitates), has been measured over a very broad range up to 45T at temperatures 56 K<T<$T_c$. We found that the experimental angular dependence of $B_{Irr}(θ)$ does not follow the mass anisotropy scaling $B_{Irr}(θ)=B_{Irr}(0)(cos^2θ+γ^{-2}sin^2θ)^{-1/2}$, where $γ=(m_c/m_{ab})^{1/2}=5-6$ for the RE-doped $YBa_2Cu_3O_{7-x}$ (REBCO) crystals, m$_{ab}$ and m$_{c}$ are the …
The irreversible magnetization of the layered high-T_{c} superconductor Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} (Bi-2201) has been measured by means of a capacitive torquemeter up to B=28 T and down to T=60 mK. No magnetization jumps, peak effects or crossovers between different pinning mechanisms appear to be present. The deduced irreversibility field B_{irr} can not be described by the law B_{irr}(T)=B_{irr}(0)(1-T/T_{c})^n based on flux creep, but an excellent agreement is found with the analytical form of the melting line of the flux lattice as calculated from the Lindemann criterion. T…
Thermally-activated flux flow (TAFF) resistivity above the irreversibility field is reported for two different c-axis textured MgB_2 superconducting films. Transport measurements at different perpendicular magnetic fields 0 < B < 9 T and temperatures from 5 to 40K reveal TAFF Ohmic resistivity described by the Arrhenius law with the quadratic field dependence of the activation energy. Our transport measurements on bulk MgB_2 ceramic samples also show the TAFF behavior, but do not show the quadratic field dependence of U(T,B). We explain our results in terms of thermally-activated drift of pre-…
A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si target. The doped films were deposited at 250 C and annealed in situ at 685 C for 1min. Up to a Si doping level of ~11wt%, the superconducting transition temperature (Tc) of the film does not change significantly, as compared to the control, undoped film. The magnetic critical current density (Jc) of the film at 5K was increased by 50% for a Si doping level…
We show that for a thin superconducting strip placed in a transverse dc magnetic field - the typical geometry of experiments with high-Tc superconductors - the application of a weak ac magnetic field perpendicular to the dc field generates a dc voltage in the strip. This voltage leads to the decay of the critical currents circulating in the strip, and eventually the equilibrium state of the superconductor is established. This relaxation is not due to thermally activated flux creep but to the "walking" motion of vortices in the two-dimensional critical state of the strip with in-plane ac field.…
The normal state resistivity of high temperature superconductors can be probed in the region below Tc by suppressing the superconducting state in high magnetic fields. Here we present the normal state properties of YBa2Cu3Ox thin films in the underdoped regime and the normal state resistance of La2-xSrxCuO4 thin films under epitaxial strain, measured below Tc by applying pulsed fields up to 60 T. A universal rho(T) behaviour is reported. We interpret these data in terms of the recently proposed 1D quantum transport model with the 1D paths corresponding to the charge stripes.
We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have p…
This review article describes the developments over the last 30 months in the thin film growth and junction fabrication of superconducting MgB2, including a brief summary the chemistry and physics of MgB2.
Superconducting MgB2 thin films were prepared on Al2O3(0001) and MgO(100) substrates. Boron thin films were deposited by the electron-beam evaporation followed by post-annealing process with magnesium. Proper post annealing conditions were investigated to grow good superconducting MgB2 thin films. The X-ray diffraction patterns showed randomly orientated growth of MgB2 phase in our thin films. The surface morphology was examined by scanning electron microscope (SEM) and atomic force microscope (AFM). Critical current density (Jc) measured by transport method was about 10^7 A/cm^2 at 15 K, and …
The presumably unconventional superconductor Beta-FeSe was deposited by radio frequency sputtering and molecular beam epitaxy (MBE) from two elementary sources. Superconducting thin films were grown in (001)-orientation on MgO(100) and YAlO3(010) substrates. The morphology of the samples was studied and directly related to the superconducting properties of the Beta-FeSe thin films. The MBE grown thin films show microcracks down to the substrate and a roughness of about 100~nm. In contrast, sputter deposited superconducting thin films show a smooth surface with almost no precipitates. In both c…
New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. A method of calculating the distribution of injected currents is proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width $W$ is assumed small relative to $Λ=2λ^2/d$, $λ$ is the bulk London penetration depth of the film material, $d$ is the film thickness.
Precursor MgB2 thin films were prepared on sapphire substrates by magnetron sputtering. Influence of ex-situ annealing process on superconducting MgB2 thin films roughness is discussed. Optimized annealing process of MgB precursor thin films in vacuum results in smooth superconducting MgB2 thin films with roughness below 10 nm, critical temperature Tcon = 31 K and transition width DTc less than 1 K. Nano-bridges based on the superconducting MgB2 thin films using optical and Focused Ion Beam lithography were prepared. Critical current density jc (4.2 K) measured on 50 nm wide strip was 7.3x106 …
Superconducting MgB2 thin films were fabricated on Al2O3(0001) substrates under an ex-situ processing conditions. Boron thin films were deposited by pulsed laser deposition followed by a post-annealing process. Resistance measurements of the deposited MgB2 films show Tc of about 39K, while scanning electron microscopy and x-ray diffraction analysis indicate that the films consist of well-crystallized grains with a highly c-axis-oriented structure.
The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the fil…
Harmonic analysis of the temperature dependence of the nonlinear ac susceptibility of Nb thin film gives excellent agreement with the susceptibility calculated on basis of model of the hysteretic critical state in 2D disk.
We have fabricated thin films of FeTe$_{1-x}$Se$_x$ using a scotch-tape method. The superconductivities of the thin films are different from each other although these films were fabricated from the same bulk sample. The result clearly presents the inhomogeneous superconductivity in FeTe$_{1-x}$Se$_x$. The difference comes from inhomogeneity due to the excess Fe concentration. The resistivity of a thin film with low excess Fe shows good superconductivity with the sharp superconducting-transition width and more isotropic superconductivity.
Scanning tunneling spectroscopy measurements of superconducting thin lanthanum films grown on a normal metal tungsten substrate reveal an extraordinarily large broadening of the coherence peaks. The observed broadening corresponds to very short electron-like quasiparticle lifetimes in the tunneling process. A thorough analysis considering the different relaxation processes reveals that the dominant mechanism is an efficient quasiparticle relaxation at the interface between the superconducting film and the underlying substrate. This process is of general relevance to scanning tunneling spectros…
We report robust vortex matching effects in antidot arrays fabricated on thin films of NbN. The near absence of hysteresis between field sweep directions indicates a negligible residual pinning in the host thin film. Owing to the very small coherence length of NbN thin films ($ξ< 5 nm$), the observations suggests the possibility of probing physics of vortices at true nanometer length scales in suitably fabricated structures.
Thin films of MgB2 superconductor were prepared by three different procedures on sapphire and silicon substrates. Boron thin films, ex-situ annealed in magnesium vapour, resulted in textured polycrystalline films with crystal dimensions below about 1000 nm, onset critical temperature Tcon near 39 K and width of phase transition about 1 K. Both, ex-situ and in-situ annealed co-deposited boron and magnesium thin films on sapphire and silicon substrates give smooth nanocrystalline films. DC properties of nanocrystalline MgB2 films co-deposited on silicon substrate reached Tcon = 33 K and zero res…
A possible scenario for electric-field induced critical current enhancement in screw dislocated YBCO thin films is proposed based on the converse piezoelectric effect originated from a heavily defected medium of the superconducting films in an applied electric field. The magnitude of the effect is found to depend concurrently on the film thickness and the number of dislocations inside a superconductor.
We present the use of a commercially available fixed-angle multi-wavelength ellipsometer for quickly measuring the thickness of NbN thin films for the fabrication and performance improvement of superconducting nanowire single photon detectors. The process can determine the optical constants of absorbing thin films, removing the need for inaccurate approximations. The tool can be used to observe oxidation growth and allows thickness measurements to be integrated into the characterization of various fabrication processes.
The discovery of superconductivity in infinite-layer nickelates has attracted much attention due to their association to the high-$T_c$ cuprates. Cuprate superconductivity was first demonstrated in bulk samples and subsequently in thin films. In the nickelates, however, the situation has been reversed: although surging as a bulk phenomenon, nickelate superconductivity has only been reported in thin films so far. At the same time, the specifics of infinite-layer nickelates yield distinct interface and surface effects that determine their bulk vs thin-film behavior. In this paper, we provide an …
We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metalinsulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting ph…
