超导MgB2薄膜纳米桥在低温电子学中的应用
Superconducting MgB2 thin films nano-bridges for cryo-electronic application
摘要：
采用磁控溅射法在蓝宝石衬底上制备了前驱体MgB 2薄膜。讨论了非原位退火工艺对MgB 2超导薄膜粗糙度的影响。通过优化MgB前驱体薄膜的真空退火工艺，得到了表面粗糙度小于10 nm，临界温度Tcon = 31 K，相变宽度DTc小于1 K的光滑超导MgB 2薄膜。利用光学光刻和聚焦离子束光刻技术制备了基于超导MgB 2薄膜的纳米桥。在50 nm宽的带材上测得的临界电流密度jc（4.2 K）为7.3 × 10 6 A/cm 2，并且没有检测到超导性能的显著损失。电阻与温度和临界电流与温度特性的测量，这些结构上使用标准的DC四探针测量。
英文摘要：
Precursor MgB2 thin films were prepared on sapphire substrates by magnetron sputtering. Influence of ex-situ annealing process on superconducting MgB2 thin films roughness is discussed. Optimized annealing process of MgB precursor thin films in vacuum results in smooth superconducting MgB2 thin films with roughness below 10 nm, critical temperature Tcon = 31 K and transition width DTc less than 1 K. Nano-bridges based on the superconducting MgB2 thin films using optical and Focused Ion Beam lithography were prepared. Critical current density jc (4.2 K) measured on 50 nm wide strip was 7.3x106 A/cm2 and no significant loss of superconducting properties was detected. Resistance vs. temperature and critical current vs. temperature characteristics were measured on these structures using standard DC four probe measurements.
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