Copper oxide thin film based metal-insulator-metal structures were subjected to white light irradiation.The top electrodes included Al, Cr and Ni while the bottom electrode was either Au or Pt. A white light pulse controls the set process and this light induced set (LIS) can be performed at very low voltages (tens of milli volts) which is not possible in the normal set process. The LIS is initiated at the positive edge of the pulse and there is no effect of the falling edge of the light. In most cases the high resistance state (HRS) to low resistance state (LRS) transition is irreversible i.e.the devices continue to remain in the LRS even after the light pulse is switched off. Light induced reset (LIR) is achieved in only one device structure Al/CuxO/Au. By using LIS and LIR, set and reset power of the device can be reduced to a great extent and the set and reset parameters variation also reduces. The current work, thus, points to the possibility of formation and compliance-free resistive random access memory devices.
Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are connected anti-serially. Here we report a tantalum-oxide based resistive memory that achieves the complementary switching functionality within a single memory cell. The complementary switching effect is accompanied by switching polarity reversal in different voltage bias regimes. These effects were explained by the redistribution of oxygen vacancies inside t…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching. Oxygen deficient amorphous chromium doped strontium titanate (Cr:$a$-SrTiO$_{3-x}$) based resistance change memories are fabricate…
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key …
The oxidation and corrosion of metals are fundamental problems in materials science and technology that have been studied using a large variety of experimental and computational techniques. Here we review some of the recent studies that have led to significant advances in our atomic-level understanding of copper oxide, one of the most studied and best understood metal oxides. We show that a good atomistic understanding of the physical characteristics of cuprous (Cu$_2$O) and cupric (CuO) oxide and of some key processes of their formation has been obtained. Indeed, the growth of the oxide has b…
The dynamic covalent properties of graphene oxide (GO) are of fundamental interest to a broad range of scientific areas and technological applications. It remains a challenge to access the feasible dynamic reactions for reversibly breaking/reforming covalent bonds of oxygen functional groups on GO, although these reactions can be induced by photonic or mechanical routes, or mediated by adsorbed water. Here, using the density functional theory calculations, we demonstrate the remarkably enhanced dynamic oxygen migration along the basal plane of GO supported by copper substrate (GO@copper), with…
Cuprous (I) oxide (Cu_{2}O) based solar cells were fabricated with the use of the electrodeposition technique at nanometre scale, and the structural, morphological and electrical properties were investigated. The Cu_{2}O layers were electrodeposited on crystalline and polycrystalline copper substrates. To complete the Cu_{2}O/Cu(100) and Cu_{2}O/Cu interfaces as the solar cells the top electrodes of silver paste were painted on the rear of Cu_{2}O. The theoretical analysis of the current voltage curve was provided to determine the values of electrical parameters of the most efficient solar cel…
In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance …
Ultra-small (r<2 nm) semiconductor quantum dots (QDs) have attracted attention for applications ranging from dye sensitized solar cells to sensing due to its tunable electronic structure and band gap, and large specific surface area. However obtaining monodisperse QDs and stabilization in this size regime remains a challenge. A recent report on digestive ripening of an oxide system showed substantial promise in addressing these requirements of QDs. In this work, we report a green solution, soft chemical (chimie douce) approach for synthesis of quasi-spherical, ultra-small, stable, and monodisp…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in transition metal oxide based RS devices is still in debate. Here, we investigated the mechanism in Niobium oxide based RS devices, which shows unipolar switching with high ON/OFF ratio, good endurance cycles and high retention times. We controlled the boundary conditions between low-conductance insulating and a high-conductance metallic state where conducting fila…
Water dissociation is of fundamental importance in scientific fields and has drawn considerable interest in diverse technological applications. However, the high activation barrier of breaking the O-H bond within the water molecule has been identified as the bottleneck, even for the water adsorbed on the graphene oxide (GO). Herein, using the density functional theory calculations, we demonstrate that the water molecule can be spontaneously dissociated on GO supported by the (111) surface of the copper substrate (Copper-GO). This process involves a proton transferring from water to the interfa…
Angle-resolved photoemission spectroscopy (ARPES) is the key momentum-resolved technique for direct probing of the electronic structure of a material. However, since it is very surface-sensitive, it has been applied to a relatively small set of complex oxides that can be easily cleaved in ultra-high vacuum. Here we describe a new multi-module system at Brookhaven National Laboratory (BNL) in which an oxide molecular beam epitaxy (OMBE) is interconnected with an ARPES and a spectroscopic-imaging scanning tunneling microscopy (SI-STM) module. This new capability largely expands the range of comp…
The problem of detecting the ability of some metal oxides as photocatalysts is receiving considerable attention in the world. The studied zinc oxide is considered as one of the most utilized semiconductors, due to its direct band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. The characteristic formulation of Copper doped zinc oxide is implemented to obtain an improved adsorption kinetics and photocatalytic activity of zinc oxide photocatalyst capable of evolving estimated photoluminescence (PL) spectra of zinc oxide nanoparticles to explore the effect of Copp…
Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) analysis, Raman spectroscopy, UV-Vis spectroscopy, and four-probe sheet resistance measurements are used to characterize the surface morphology, structural, optical, and electrical properties respectively. Deposition is carried out at room temperature and between 200 and 300 °C. XRD analysis indicates that the oxide formed is primarily Cu$_2$O and the a…
The negative thermal expansion (NTE) mechanism in Cu2O has been characterised via mapping of different Cu2O structural flexibility models onto phonons obtained using ab-initio lattice dynamics. Low frequency acoustic modes that are responsible for the NTE in this material correspond to vibrations of rigid O-Cu-O rods. There is also some small contribution from higher frequency optic modes that correspond to rotations of rigid and near-rigid OCu4 tetrahedra as well as of near-rigid O-Cu-O rods. The primary NTE mode also drives a ferroelastic phase transition at high pressure; our calculations p…
Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer thickness. Grain boundary-free and atomically flat films prepared by atomic-sputtering epitaxy allow tailoring of the oxide layer with an abrupt interface via heat treatment with a suppressed temperatu…
We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical TEM technique using energy-filtering transmission electron microscopy and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at top interface by an oxidation-reduction reaction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switch…
Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum electrodes. We found a bipolar resistive switching behavior in the high temperature region (> 140 K), and two activation energies of shallow traps, 0.055 eV and 0.126 eV in the ohmic current regime. We also proposed that the bipolar resistive switching of amorphous TiO2 thin films is governed by the transition of conduction mode from a bulk-limited SCLC mode…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental results on threshold switching in a number of various transition metal (V, Ti, Fe, Nb, Mo, W, Hf, Zr, Mn, Y, and Ta) oxide films obtained by anodic oxidation. Then, the results concerning the effects of bistable resistive switching in MOM and MOS structures on the basis of such oxides as V2O5, Nb2O5, and NiO are presented. It is shown that sandwich structures …
Phonons are produced when an excited vacancy in cuprous oxide (Cu$_2$O) relaxes. Time resolved luminescence was used to find the excited copper vacancy (acceptor) and oxygen vacancy (donor) trap levels and lifetimes. It was also used to determine the typical energy and number of phonons in the phonon pulses emitted by vacancies. The vacancy properties of cuprous oxide are controlled by several synthesis parameters and by the temperature. We directly demonstrate the absorption of light by oxygen vacancies with transient absorption. Copper and oxygen vacancies behave differently, in part because…
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in re…
Objective of this work was to synthesize Copper doped Zinc Oxide (CZO) films and optimization of process parameters by varying molarity of zinc acetate dehydrate from 0.5 M to 1.0 M, concentration of copper acetate monohydrate from 1% to 5 % and annealing temperature from 200 C to 300 C to measure the sensitivity of CZO films for CO (Carbon Monoxide) gas. The concentration of CO gas was maintained at 5 ppm and operating temperature of 250 oC was used for sensing. Analysis for sensitivity showed highest grading for parametric combination of 0.75 molarity, 3% copper concentration and 300 C annea…
Usually, single-crystal material has a longer carrier diffusion length due to fewer defects. Here, we report a nano/amorphous copper oxide and selenium (COS) composite film prepared by radio frequency magnetron co-sputtering of CuO and Se and post annealing. The photo-generated carriers in the COS film can diffuse very far (3.147 mm). Additionally, the COS film can strongly absorb light over the entire solar spectrum region (250-2500 nm) (average absorptance is ~80%). These results indicate that the COS composite is an excellent material and can be used in solar cells and other photo-electric …
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy efficient and have an exception data retention period. Among several existing memory technologies, resistive random-access memory (RRAM) is an answer to the above question as it is necessary to possess the combination of speed of RAM and nonvolatility, thus proving to be one of the most promising candidates to replace flash memory in next-generation non-volatile RAM…
We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic circuits. Few-nm-thick layers of NbOx, CuOx and TiOx have been formed by thermal and plasma oxidation, at various deposition and oxidation conditions, both with or without rapid thermal post-annealing (RTA). The resistive bistability effect has been observed for all these materials, with particularly high endurance (over 1000 switching cycles) obtained for …
We report an experimental investigation on the irradiation of copper thin films with high repetition rate femtosecond laser pulses (1040 nm, 50 MHz), in ambient air and liquid water. We observe a novel, striking phenomenon of chromatic copper oxides (cupric oxide and cuprous oxide) annuli generation. The characteristic features of the chromatic copper oxide annuli are studied by exploiting micro-Raman Spectroscopy, Optical and Scanning Electron Microscopies. In the case of irradiation in water, the seldom investigated effects of the immersion time, after irradiation with a fixed number of puls…
Copper oxide II is a p-type semiconductor that can be used in several applications. Focusing on producing such material using an easy and low-cost technique, we followed an acetate one-pot-like route for producing a polymer precursor solution with different acetates:PVP (polyvinylpyrrolidone) weight ratios. Then, composite nanofibers were produced using the solution blow spinning (SBS) technique. The ceramic CuO samples were obtained after a calcination process at 600 oC for two hours, applying a heating rate of 0.5 oC/min. Non-woven fabric-like ceramic samples with average diameters lower tha…
Copper oxide nanostructures with spherical (0D), needle (1D) and hierarchical cauliflower (3D) morphologies are used to demonstrate superhydrophobic, superoleophobic and slippery behavior. These nanostructures are synthesized on galvanized steel substrates using a simple chemical bath deposition method by tuning precursor concentration. Subsequent coating of low surface energy polymer, polydimethylsiloxane, results in superhydrophobicity with water contact angle ~160(2)° and critical sliding angle ~2°. When functionalized with low-surface energy perfluoroalkyl silane, these surfaces display hi…
The microscopic understanding of high-temperature superconductivity in cuprates has been hindered by the apparent complexity of crystal structures in these materials. We used scanning tunneling microscopy and spectroscopy to study an electron-doped copper oxide compound Sr$_{1-x}$Nd$_x$CuO$_2$ that has only bare cations separating the CuO$_2$ planes and thus the simplest infinite-layer structure among all cuprate superconductors. Tunneling conductance spectra of the major CuO$_2$ planes in the superconducting state revealed direct evidence for a nodeless pairing gap, regardless of variation of…
Surface oxidation of high-purity copper is accelerated under tribological loading. Tribo-oxide formation at room temperature is associated with diffusion processes along defects, such as dislocations or grain boundaries. Here, we embark on investigating the additional influence of temperature on the tribo-oxidation of copper. Dry, reciprocating sliding tests were performed with a variation of the sample temperature between 21 - 150 $^\circ$C. Microstructural changes were monitored and analyzed with state-of-the-art electron microscopy techniques. Oxide layer formation through thermal oxidation…
The electrical transport properties of ultrathin YBCO films have been modified using an electric double layer transistor configuration employing an ionic liquid. The films were grown on SrTiO3 substrates using high pressure oxygen sputtering. A clear evolution from superconductor to insulator was observed in nominally 7 unit cell thick films. Using a finite size scaling analysis, curves of resistance versus temperature, R(T), over the temperature range from 6K to 22K were found to collapse onto a single scaling function, which suggests the the presence of a quantum critical point. However the …
High-temperature (high-Tc) superconductivity in the copper oxides arises from electron or hole doping of their antiferromagnetic (AF) insulating parent compounds. The evolution of the AF phase with doping and its spatial coexistence with superconductivity are governed by the nature of charge and spin correlations and provide clues to the mechanism of high-Tc superconductivity. Here we use a combined neutron scattering and scanning tunneling spectroscopy (STS) to study the Tc evolution of electron-doped superconducting Pr0.88LaCe0.12CuO4-delta obtained through the oxygen annealing process. We f…
The parent compound of the copper-oxide high temperature superconductors is a Mott insulator. Superconductivity is realized by doping an appropriate amount of charge carriers. How a Mott insulator transforms into a superconductor is crucial in understanding the unusual physical properties of high temperature superconductors and the superconductivity mechanism. Here we report high resolution angle-resolved photoemission measurement on heavily underdoped Bi2Sr2-xLaxCuO6+d system. The electronic structure of the lightly-doped samples exhibit a number of characteristics: existence of an energy gap…
The results of X-ray photoemission (XPS) and valence bands spectroscopy, optically stimulated electron emission (OSEE) measurements and density functional theory based modeling of graphene oxide (GO) placed on Cu via an electrophoretic deposition (EPD) are reported. The comparison of XPS spectra of EPD prepared GO/Cu composites with those of as prepared GO, strongly reduced GO, pure and oxidized copper demonstrate the partial (until C/O ratio about two) removal of oxygen-containing functional groups from GO simultaneously with the formation of copper oxide-like layers over the metallic substra…
Since the discovery of n-type copper oxide superconductors, the evolution of electron- and hole-bands and its relation to the superconductivity have been seen as a key factor in unveiling the mechanism of high-Tc superconductors. So far, the occurrence of electrons and holes in n-type copper oxides has been achieved by chemical doping, pressure, and/or deoxygenation. However, the observed electronic properties are blurred by the concomitant effects such as change of lattice structure, disorder, etc. Here, we report on successful tuning the electronic band structure of n-type Pr2-xCexCuO4 (x = …
